8lnch n-Ubwoko bwa SiC Substrate

Ibisobanuro bigufi:

8-inim n-ubwoko bwa SiC substrate niterambere rya n-ubwoko bwa silicon karbide (SiC) imwe ya kirisiti ya kirisiti ifite diameter iri hagati ya 195 na 205 mm nubugari buri hagati ya mikoro 300 na 650. Iyi substrate ifite icyerekezo kinini cya doping hamwe nuburyo bwitondewe bwo kwibanda kumurongo, bitanga imikorere myiza kubikorwa bitandukanye bya semiconductor.


Ibicuruzwa birambuye

Ibicuruzwa

8 lnch n-Ubwoko bwa Conductive SiC Substrate itanga imikorere itagereranywa kubikoresho bya elegitoroniki yingufu, itanga ubushyuhe bwiza bwumuriro, imbaraga zo kumeneka mwinshi hamwe nubwiza buhebuje bwa porogaramu ya semiconductor igezweho. Semicera itanga ibisubizo biyobora inganda hamwe na 8 lnch n-Ubwoko bwa Conductive SiC Substrate.

Semicera ya 8 lnch n-Ubwoko bwa Conductive SiC Substrate ni ibikoresho bigezweho bigamije guhuza ibyifuzo bya elegitoroniki bigenda byiyongera hamwe na porogaramu zikoresha cyane. Substrate ikomatanya ibyiza bya karubide ya silicon hamwe nubwoko bwa n-uburyo bwo gutanga umusaruro utagereranywa mubikoresho bisaba ingufu nyinshi, ingufu zumuriro, no kwizerwa.

Semicera ya 8 lnch n-Ubwoko bwa Conductive SiC Substrate yakozwe neza kugirango irebe neza kandi ihamye. Igaragaza uburyo bwiza bwo gukwirakwiza ubushyuhe bwogukwirakwiza ubushyuhe neza, bigatuma biba byiza kubikorwa byingufu nyinshi nka power inverters, diode, na transistors. Byongeye kandi, iyi substrate yo hejuru yamashanyarazi yamashanyarazi iremeza ko ishobora kwihanganira ibintu bisabwa, itanga urubuga rukomeye rwa elegitoroniki ikora cyane.

Semicera izi uruhare rukomeye 8 lnch n-Ubwoko bwa Conductive SiC Substrate igira uruhare mugutezimbere tekinoroji ya semiconductor. Substrates zacu zakozwe hifashishijwe uburyo bugezweho bwo gukora kugirango tumenye neza ko inenge nkeya, ari ingenzi mu iterambere ryibikoresho byiza. Uku kwitondera amakuru arambuye ashoboza ibicuruzwa bishyigikira umusaruro wibisekuru bizaza bya elegitoroniki hamwe nibikorwa bihanitse kandi biramba.

8 lnch n-Ubwoko bwa Conductive SiC Substrate nayo yateguwe kugirango ihuze ibikenewe byinshi mubisabwa kuva mumodoka kugeza ingufu zishobora kubaho. n-ubwoko bwimikorere itanga amashanyarazi akenewe mugutezimbere ibikoresho byamashanyarazi bikora neza, bigatuma iyi substrate igice cyingenzi muguhindura tekinoloji ikoresha ingufu nyinshi.

Muri Semicera, twiyemeje gutanga insimburangingo itera udushya mu gukora semiconductor. 8 lnch n-Ubwoko bwa Conductive SiC Substrate nubuhamya bwubwitange bwacu kubwiza no kuba indashyikirwa, bituma abakiriya bacu bakira ibikoresho byiza bishoboka kubyo basabye.

Ibipimo fatizo

Ingano 8-cm
Diameter 200.0mm + 0mm / -0.2mm
Icyerekezo cy'ubuso hanze-axis: 4 ° yerekeza kuri <1120> 士 0.5 °
Icyerekezo Icyerekezo <1100> 士 1 °
Inguni 90 ° + 5 ° / -1 °
Uburebure bwimbitse 1mm + 0,25mm / -0mm
Icyiciro cya kabiri /
Umubyimba 500.0 士 25.0um / 350.0 ± 25.0um
Polytype 4H
Ubwoko bw'imyitwarire n-Ubwoko

 

8lnch n-ubwoko bwa sic Substrate-2
SiC wafers

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