Umubare munini wa CVD SiC Impeta

Ibisobanuro bigufi:

Impeta nyinshi za CVD SiC zikoresha gaze ya silicon (nka hydride hydride) na gaze ya karubone (nka metani) nkibikoresho fatizo, ikora ubushyuhe bwinshi kugirango ibike ibikoresho binini bya SiC kuri substrate cyangwa mubumba. Ubu buryo butuma SiC ibikwa kimwe ahantu hanini, ikora impeta ikomeye kandi ihamye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Kuki Silicon Carbide Etching Impeta?

RTPCVD SiC impetazikoreshwa cyane mubikorwa byinganda nubumenyi mubushyuhe bwinshi nibidukikije byangirika. Ifite uruhare runini mu gukora semiconductor, optoelectronics, imashini zisobanutse ninganda zikora imiti. Porogaramu zihariye zirimo:

1. Gukora Semiconductor:RTP CVD SiC impetaIrashobora gukoreshwa mugushushya no gukonjesha ibikoresho bya semiconductor, gutanga ubushyuhe buhamye no kwemeza neza inzira.

2. Optoelectronics: Bitewe nubushyuhe bwiza bwumuriro hamwe nubushyuhe bwo hejuru, RTPCVD SiC impetaIrashobora gukoreshwa nkibikoresho hamwe nubushyuhe bwo gukwirakwiza laseri, ibikoresho byitumanaho rya fibre optique nibikoresho bya optique.

4. Inganda zikora imiti: Bitewe no kwangirika kwangirika no gutuza imiti, impeta ya RTP CVD SiC irashobora gukoreshwa mubikoresho, imiyoboro hamwe na reaktori mubikorwa bya chimique hamwe na catalitiki.

Epi Sisitemu

Sisitemu ya RTP

Sisitemu ya CVD

Imikorere y'ibicuruzwa:

1. Hura inzira iri munsi ya 28nm

2. Kurwanya ruswa

3. Imikorere isukuye cyane

4. Gukomera cyane

5. Ubucucike bukabije

6. Kurwanya ubushyuhe bwinshi

7. Kwambara ibiturwanya

Gusaba ibicuruzwa:

Ibikoresho bya karubide ya silikoni bifite ibiranga ubukana bwinshi, kurwanya kwambara, kurwanya ruswa no guhagarara neza. Ibicuruzwa bifite imikorere yuzuye ikoreshwa cyane mugukama byumye na TF / Diffusion inzira.