Ibikoresho byo gushyushya Substrate ya MOCVD

Ibisobanuro bigufi:

Ibikoresho byo gushyushya Semicera kuri Substrate ya MOCVD byakozwe kugirango bitange ubushyuhe bwuzuye kandi butajegajega muburyo bwa Metal-Organic Chemical Vapor Deposition (MOCVD). Ikozwe muri grafite yo mu rwego rwohejuru, ibi bikoresho byo gushyushya bitanga ubushyuhe budasanzwe bwumuriro, gushyushya kimwe, no kwizerwa igihe kirekire. Nibyiza kubikorwa bya semiconductor, umusaruro wa LED, hamwe nibikoresho bigezweho, ibikoresho byo gushyushya Semicera byemeza imikorere ihamye, bigahindura inzira ya substrate ya MOCVD kugirango ikorwe neza kandi nziza.


Ibicuruzwa birambuye

Ibicuruzwa

Ibintu nyamukuru biranga grafite:

1. Guhuza imiterere yubushyuhe.

2. Umuyoboro mwiza w'amashanyarazi n'umutwaro mwinshi w'amashanyarazi.

3. Kurwanya ruswa.

4. kutaboneka.

5. Ubuziranenge bwimiti.

6. Imbaraga zikomeye.

Ibyiza ni ingufu zikoresha ingufu, agaciro gakomeye no kubungabunga bike. Turashobora kubyara anti-okiside hamwe nigihe kirekire cyo gushushanya grafite ingirakamaro, ibishushanyo mbonera hamwe nibice byose bishyushya.

MOCVD-Substrate-Gushyushya-Gushyushya-Ibintu-Kuri-MOCVD3-300x300

Ibipimo nyamukuru byubushyuhe bwa grafite

Ibisobanuro bya tekiniki

Semicera-M3

Ubucucike bwinshi (g / cm3)

851.85

Ibirimo ivu (PPM)

00500

Gukomera ku nkombe

≥45

Kurwanya Byihariye (μ.Ω.m)

≤12

Imbaraga zoroshye (Mpa)

≥40

Imbaraga Zikomeretsa (Mpa)

≥70

Icyiza. Ingano y'ibinyampeke (μm)

≤43

Coefficient yo Kwagura Ubushyuhe Mm / ° C.

≤4.4 * 10-6

MOCVD Substrate Ubushyuhe_ Ibikoresho byo gushyushya MOCVD
Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
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