Ibikoresho byo gushyushya Substrate ya MOCVD

Gushyushya Ibintu Kuri MOCVD Substrate Yerekanwe Ishusho

Ibisobanuro bigufi:

Semicera Energy Technology Co., Ltd. nisoko ritanga amasoko meza ya semiconductor ceramics kandi rukora uruganda rukumbi mubushinwa rushobora gutanga icyarimwe gutanga silicon karbide ceramic (cyane cyane theYongeye gushyirwaho SiC) hamwe na CVD SiC. Mubyongeyeho, isosiyete yacu yiyemeje kandi mumirima yubutaka nka alumina, nitride ya aluminium, zirconi, na nitride ya silicon, nibindi.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibintu nyamukuru biranga grafite:

1. Guhuza imiterere yubushyuhe.

2. Umuyoboro mwiza w'amashanyarazi n'umutwaro mwinshi w'amashanyarazi.

3. Kurwanya ruswa.

4. kutaboneka.

5. Ubuziranenge bwimiti.

6. Imbaraga zikomeye.

Ibyiza ni ingufu zikoresha ingufu, agaciro gakomeye no kubungabunga bike. Turashobora kubyara anti-okiside hamwe nigihe kirekire cyo kubaho grafite ingirakamaro, ibishushanyo mbonera hamwe nibice byose byashyushye.

MOCVD-Substrate-Gushyushya-Gushyushya-Ibintu-Kuri-MOCVD3-300x300

Ibipimo nyamukuru byubushyuhe bwa grafite

Ibisobanuro bya tekiniki	Semicera-M3
Ubucucike bwinshi (g / cm3)	851.85
Ibirimo ivu (PPM)	00500
Gukomera ku nkombe	≥45
Kurwanya Byihariye (μ.Ω.m)	≤12
Imbaraga zoroshye (Mpa)	≥40
Imbaraga Zikomeretsa (Mpa)	≥70
Icyiza. Ingano y'ibinyampeke (μm)	≤43
Coefficient yo Kwagura Ubushyuhe Mm / ° C.	≤4.4 * 10-6