Semicera YeraSilicon Carbide Paddleni ubwitonzi bwitondewe kugirango buhuze ibyifuzo bikenewe bya kijyambere ya semiconductor. IbiSiC Cantilever Paddleindashyikirwa mubushyuhe bwo hejuru, itanga ubushyuhe butagereranywa bwumuriro hamwe nigihe kirekire. Imiterere ya SiC Cantilever yubatswe kugirango ihangane n’ibihe bikabije, itanga uburyo bwizewe bwo gukora wafer mu nzira zitandukanye.
Kimwe mu bintu by'ingenzi bishya byaSiC Paddlenigishushanyo cyacyo cyoroshye ariko gikomeye, cyemerera kwinjiza byoroshye muri sisitemu zihari. Ubushyuhe bwinshi bwumuriro bufasha kubungabunga umutekano wafer mugihe cyicyiciro gikomeye nko gutobora no kubitsa, kugabanya ibyago byo kwangirika kwa wafer no gutanga umusaruro mwinshi. Gukoresha karbide ya silicon yuzuye cyane mubwubatsi bwa paddle byongera imbaraga zo kwihanganira kwambara no kurira, bitanga ubuzima bwigihe kirekire kandi bikagabanya gukenera gusimburwa kenshi.
Semicera ishimangira cyane guhanga udushya, gutanga aSiC Cantilever Paddleibyo ntabwo byujuje gusa ahubwo birenze ibipimo byinganda. Iyi paddle itezimbere kugirango ikoreshwe mubikorwa bitandukanye bya semiconductor, kuva kubitsa kugeza kurigata, aho uburinganire nubwizerwe ari ngombwa. Muguhuza ubu buhanga bugezweho, ababikora barashobora kwitega kunoza imikorere, kugabanya ibiciro byo kubungabunga, hamwe nubuziranenge bwibicuruzwa.
Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho | |
Umutungo | Agaciro gasanzwe |
Ubushyuhe bwo gukora (° C) | 1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije) |
Ibirimo | > 99,96% |
Ibirimo Si kubuntu | <0.1% |
Ubucucike bwinshi | 2.60-2.70 g / cm3 |
Ikigaragara | <16% |
Imbaraga zo kwikuramo | > 600 MPa |
Imbaraga zikonje | 80-90 MPa (20 ° C) |
Imbaraga zunamye | 90-100 MPa (1400 ° C) |
Kwiyongera k'ubushyuhe @ 1500 ° C. | 4.70 10-6/ ° C. |
Ubushyuhe bwumuriro @ 1200 ° C. | 23 W / m • K. |
Modulus | 240 GPa |
Kurwanya ubushyuhe | Nibyiza cyane |