Ibice bikomeye bya CVD SILICON CARBIDE bizwi nkuguhitamo kwambere kumpeta ya RTP / EPI hamwe na base hamwe na plasm aetch cavity ibice bikorera kuri sisitemu yo hejuru isaba ubushyuhe bwo gukora (> 1500 ℃), ibisabwa mubyera ni byinshi cyane (> 99,9995%) na imikorere nibyiza cyane mugihe kurwanya imiti ari hejuru cyane. Ibi bikoresho ntabwo birimo ibyiciro bya kabiri kuruhande rwingano, bityo ibice byabyo bitanga uduce duto ugereranije nibindi bikoresho. Byongeye kandi, ibyo bice birashobora gusukurwa ukoresheje HF / HCl ishyushye hamwe no kwangirika gake, bikavamo uduce duto nubuzima bwa serivisi ndende.