Semicera itangiza semiconductor yo mu rwego rwo hejurusilicon carbide cantilever paddles, yashizweho kugirango ihuze ibyifuzo bikenewe byinganda zigezweho.
Uwitekasilicon carbide paddleIbiranga igishushanyo mbonera kigabanya kwaguka kwinshi nubushyuhe, bigatuma byizewe cyane mubihe bikabije. Ubwubatsi bwayo bukomeye butanga igihe kirekire, bikagabanya ibyago byo kumeneka cyangwa kwambara, bifite akamaro kanini mugukomeza umusaruro mwinshi hamwe nubwiza bwumusaruro uhoraho. Uwitekaubwato bwa waferIgishushanyo nacyo gihuza hamwe nibikoresho bisanzwe bitunganya semiconductor, byemeza guhuza no koroshya imikoreshereze.
Kimwe mu bintu biranga SemiceraSiCni imiti irwanya imiti, iyemerera gukora neza bidasanzwe mubidukikije byangiza imyuka yangiza na chimique. Semicera yibanze kubikorwa byihariye itanga ibisubizo byihariye.
| Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho | |
| Umutungo | Agaciro gasanzwe |
| Ubushyuhe bwo gukora (° C) | 1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije) |
| Ibirimo | > 99,96% |
| Ibirimo Si kubuntu | <0.1% |
| Ubucucike bwinshi | 2.60-2.70 g / cm3 |
| Ikigaragara | <16% |
| Imbaraga zo kwikuramo | > 600 MPa |
| Imbaraga zikonje | 80-90 MPa (20 ° C) |
| Imbaraga zunamye | 90-100 MPa (1400 ° C) |
| Kwiyongera k'ubushyuhe @ 1500 ° C. | 4.70 10-6/ ° C. |
| Ubushyuhe bwumuriro @ 1200 ° C. | 23 W / m • K. |
| Modulus | 240 GPa |
| Kurwanya ubushyuhe | Nibyiza cyane |
