InP na CdTe Substrate

Ibisobanuro bigufi:

InP ya Semicera InP na CdTe Substrate ibisubizo byateguwe kubikorwa byogukora cyane mubikorwa bya semiconductor ninganda zikomoka ku zuba. InP yacu (Indium Phosphide) na CdTe (Cadmium Telluride) substrate itanga ibintu bidasanzwe, harimo gukora neza, amashanyarazi meza, hamwe nubushyuhe bukomeye bwumuriro. Izi nteruro ninziza zo gukoreshwa mubikoresho bigezweho bya optoelectronic, transistors yumurongo mwinshi, hamwe nizuba rito cyane, bitanga umusingi wizewe muburyo bugezweho.


Ibicuruzwa birambuye

Ibicuruzwa

Hamwe na SemiceraInP na CdTe Substrate, urashobora kwitega ubuziranenge kandi busobanutse neza kugirango uhuze ibikenewe mubikorwa byawe byo gukora. Haba kubikoresho bifotora cyangwa ibikoresho bya semiconductor, substrate zacu zakozwe kugirango tumenye neza imikorere, iramba, kandi ihamye. Nkumuntu utanga isoko ryizewe, Semicera yiyemeje gutanga ibisubizo byujuje ubuziranenge, byigenga byifashishwa mu guhanga udushya mu bikoresho bya elegitoroniki n’ingufu zishobora kongera ingufu.

Crystalline hamwe nu mashanyarazi1

Andika
Dopant
EPD (cm–2Below Reba hepfo A.)
DF (Yuzuye Ubusa) agace (cm2, Reba hepfo B.)
c / (c cm–3
Mobilit (y cm2/ Vs)
Kurwanya (y Ω・ cm)
n
Sn
≦ 5 × 104
≦ 1 × 104
≦ 5 × 103
──────
 

(0.5〜6) × 1018
──────
──────
n
S
──────
≧ 10 (59.4%)
≧ 15 (87%). 4
(2〜10) × 1018
──────
──────
p
Zn
──────
≧ 10 (59.4%)
≧ 15 (87%).
〜 3〜6) × 1018
──────
──────
SI
Fe
≦ 5 × 104
≦ 1 × 104
──────
──────
──────
≧ 1 × 106
n
nta na kimwe
≦ 5 × 104
──────
≦ 1 × 1016
≧ 4 × 103
──────
1 Ibindi bisobanuro birahari bisabwe.

A.13 Impuzandengo

1. Dislocation etch umwobo wapimye ku manota 13.

2. Agace karemereye impuzandengo yubucucike bwa dislocation irabaze.

Ibipimo by'akarere B.DF (Mugihe cy'ingwate y'akarere)

1. Dislocation etch pit ubucucike bwamanota 69 yerekanwe nkiburyo burabarurwa.

2. DF isobanurwa nka EPD munsi ya 500cm–2
3. Agace ntarengwa DF gapimwe nubu buryo ni 17.25cm2
InP na CdTe Substrate (2)
InP na CdTe Substrate (1)
InP na CdTe Substrate (3)

InP Imirongo imwe ya Crystal Substrates Ibisanzwe

1. Icyerekezo
Icyerekezo cy'ubuso (100) ± 0.2º cyangwa (100) ± 0.05º
Surface off icyerekezo irahari bisabwe.
Icyerekezo cya etage ya: (011) ± 1º cyangwa (011) ± 0.1º NIBA: (011) ± 2º
Cleaved OF irahari bisabwe.
2. Ikimenyetso cya Laser gishingiye ku gipimo cya SEMI kirahari.
3. Porogaramu yumuntu ku giti cye, kimwe na paki muri gaze ya N2 irahari.
4. Etch-na-paki muri gaze ya N2 irahari.
5. Waferi y'urukiramende irahari.
Hejuru y'ibisobanuro ni ibya JX 'bisanzwe.
Niba ibindi bisobanuro bisabwa, nyamuneka utubaze.

Icyerekezo

 

InP na CdTe Substrate (4) (1)
Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
Inzu y'Ububiko bwa Semicera
Serivisi yacu

  • Mbere:
  • Ibikurikira: