Ingano nini yongeye gushyirwaho silicon karbide wafer ubwato

Ibisobanuro bigufi:

Semicera Energy Technology Co., Ltd ni uruganda rukora tekinoroji rwashinzwe mu Bushinwa, Turi abanyamwuga batanga inganda Semiconductor inganda zongeye gushyirwaho silicon karbide ya kristu yubwato ikora kandi itanga isoko.


Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza bya karubide ya silicon yongeye gushyirwaho

Carbide ya silicon yongeye gushyirwaho (R-SiC) ni ibikoresho bikora cyane hamwe n'ubukomezi bwa kabiri nyuma ya diyama, ikorwa ku bushyuhe buri hejuru ya 2000 ℃. Igumana ibintu byinshi byiza bya SiC, nkimbaraga zubushyuhe bwo hejuru, kurwanya ruswa ikomeye, kurwanya okiside nziza, kurwanya ubushyuhe bwumuriro nibindi.

Properties Ibikoresho byiza bya mashini. Carbide yongeye gushyirwaho karbide ifite imbaraga nubukomezi kurenza fibre ya karubone, irwanya ingaruka nyinshi, irashobora gukina imikorere myiza mubushuhe bukabije, irashobora gukina imikorere iringaniza mubihe bitandukanye. Mubyongeyeho, ifite kandi ihinduka ryiza kandi ntabwo yangiritse byoroshye kurambura no kunama, bitezimbere cyane imikorere yayo.

Resist Kurwanya ruswa. Carbide ya silicon yongeye gushyirwaho ifite imbaraga nyinshi zo kurwanya ruswa yibitangazamakuru bitandukanye, irashobora gukumira isuri yibitangazamakuru bitandukanye byangirika, irashobora kugumana imiterere yubukanishi igihe kirekire, ifatanye cyane, kuburyo ifite ubuzima burebure. Mubyongeyeho, ifite kandi ubushyuhe bwiza bwumuriro, irashobora guhuza nurwego runaka rwubushyuhe, kunoza ingaruka zikoreshwa.

Sin Sinteri ntigabanuka. Kuberako inzira yo gucumura itagabanuka, ntagahato gasigaye kazatera guhindagurika cyangwa gucika kubicuruzwa, kandi ibice bifite imiterere igoye kandi byuzuye birashobora gutegurwa.

Ibipimo bya tekiniki:

图片 2

Urupapuro rwibikoresho

材料 Ibikoresho

R-SiC

使用温度Ubushyuhe bwo gukora (°C)

1600 ° C (氧化气氛Oxidizing ibidukikije)

1700 ° C (还原气氛Kugabanya ibidukikije)

SiC含量Ibirimo bya SiC (%)

> 99

自由Si含量Ibirimo Si kubuntu (%)

<0.1

体积密度Ubucucike bwinshi (g / cm3)

2.60-2.70

气孔率Ikigaragara ni uko (%)

<16

抗压强度Imbaraga zo kumenagura (MPa)

> 600

常温抗弯强度Imbaraga zikonje (MPa)

80-90 (20 ° C)

高温抗弯强度Imbaraga zishyushye (MPa)

90-100 (1400 ° C)

热膨胀系数

Coefficient yo kwagura ubushyuhe @ 1500 ° C (10-6 / ° C)

4.70

导热系数Amashanyarazi yumuriro @ 1200°C (W / mK)

23

杨氏模量Modulus (GPa)

240

抗热震性Kurwanya ubushyuhe

很好Nibyiza cyane

Silicon karbide ubwato bwa kirisiti (2)
Silicon carbide ubwato bwa kirisiti (3)
Silicon carbide ubwato bwa kirisiti (4)
Ubwato bwa Silicon Carbide Wafer (5)
Ubwato bwa Silicon Carbide Wafer (4)
Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
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