LiNbO3 Bonding wafer

Ibisobanuro bigufi:

Litiyumu niobate kristu ifite amashanyarazi meza cyane, acousto-optique, piezoelectric, hamwe numurongo utari umurongo. Litiyumu niobate kristal ni ikintu cyingenzi gikora kristu ifite ibyiza byiza bidafite umurongo wa optique hamwe na coefficient nini idafite umurongo; irashobora kandi kugera kubice bidahuje guhuza. Nka electro-optique ya kristu, yakoreshejwe nkibikoresho byingenzi bya optique; nka piezoelectric kristal, irashobora gukoreshwa mugukora filteri yo hagati na ntoya ya SAW muyunguruzi, imbaraga-zohejuru-nyinshi zidashobora kwihanganira ultrasonic transducers, nibindi. Doped lithium niobate nayo ikoreshwa cyane.

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Ibicuruzwa birambuye

Ibicuruzwa

LiNbO3 Bonding Wafer ya Semicera yashizweho kugirango ihuze ibyifuzo byinshi byinganda zikora neza. Hamwe nimiterere yihariye, harimo kwihanganira kwambara hejuru, guhagarara neza kwubushyuhe, hamwe nubuziranenge buhebuje, iyi wafer nibyiza gukoreshwa mubisabwa bisaba gukora neza kandi biramba.

Mu nganda ziciriritse, LiNbO3 Bonding Wafers isanzwe ikoreshwa muguhuza ibice bito mubikoresho bya optoelectronic, sensor, hamwe na IC bigezweho. Bahabwa agaciro cyane cyane muri fotonike na MEMS (Micro-Electromechanical Systems) kubera imiterere myiza ya dielectric nubushobozi bwo kwihanganira imikorere mibi. Semicera ya LiNbO3 Bonding Wafer yakozwe kugirango ishyigikire neza ibice, byongera imikorere muri rusange hamwe nubwizerwe bwibikoresho bya semiconductor.

Ibikoresho byumuriro n amashanyarazi bya LiNbO3
Ingingo yo gushonga	1250 ℃
Ubushyuhe bwa Curie	1140 ℃
Amashanyarazi	38 W / m / K @ 25 ℃
Coefficient yo kwagura ubushyuhe (@ 25 ° C)	//a，2.0£10^-6/ K. //c，2.2£10^-6/ K.
Kurwanya	2 × 10^-6Ω · cm @ 200 ℃
Dielectric ihoraho	εS11 / ε0 = 43 ， εT11 / ε0 = 78 εS33 / ε0 = 28 ， εT33 / ε0 = 2
Piezoelectric ihoraho	D₂₂= 2.04 × 10^-11C / N. D₃₃= 19.22 × 10^-11C / N.
Coefficient ya electro-optique	γT₃₃= 32 pm / V ， γS₃₃= 31 pm / V ， γT₃₁= 10 pm / V ， γS₃₁= 8,6 pm / V ， γT₂₂= 6.8 pm / V ， γS₂₂= 3.4 pm / V ，
Igice cya kabiri cyumuvuduko, DC Umuriro w'amashanyarazi // z, urumuri ⊥ Z; Umuriro w'amashanyarazi // x cyangwa y, urumuri ⊥ z	3.03 KV 4.02 KV

Yakozwe hifashishijwe ibikoresho byo mu rwego rwo hejuru, LiNbO3 Bonding Wafer itanga ubwizerwe burigihe ndetse no mubihe bikabije. Ubushyuhe bukabije bwumuriro butuma bikwiranye cyane nibidukikije birimo ubushyuhe bwo hejuru, nkibiboneka muri semiconductor epitaxy. Ikigeretse kuri ibyo, ubuziranenge bwa wafer butuma umuntu yandura cyane, bigatuma ahitamo kwizerwa kubikorwa byingenzi bya semiconductor.

Muri Semicera, twiyemeje gutanga ibisubizo biyobora inganda. LiNbO3 Bonding Wafer itanga uburebure butagereranywa hamwe nubushobozi buhanitse kubisabwa bisaba isuku ryinshi, kwambara birwanya, hamwe nubushyuhe bwumuriro. Haba kubikorwa bya semiconductor byateye imbere cyangwa ubundi buhanga bwihariye, iyi wafer ikora nkibintu byingenzi mugukora ibikoresho bigezweho.