Igiciro gito kuri Tubular Shape Sic Heater Silicon Carbide Gushyushya Ikintu

Ibisobanuro bigufi:

WeiTai Energy Technology Co., Ltd. nisoko ritanga amasoko meza ya semiconductor ceramics kandi rukora uruganda rukumbi mubushinwa rushobora gutanga icyarimwe gutanga silicon karbide ceramic (cyane cyane theYongeye gushyirwaho SiC) hamwe na CVD SiC.Mubyongeyeho, isosiyete yacu yiyemeje kandi mumirima yubutaka nka alumina, nitride ya aluminium, zirconi, na nitride ya silicon, nibindi.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Hamwe na sisitemu nziza yizewe, ihagaze neza kandi ifashwa neza nabaguzi, urukurikirane rwibicuruzwa nibisubizo byakozwe nishirahamwe ryacu byoherezwa mubihugu ndetse no mukarere kitari gito kubiciro bito bya Tubular Shape Sic Heater Silicon Carbide Heating Element, Murakaza neza kugirango mutegure igihe kirekire- igihe cyo gushyingiranwa natwe.Igiciro cyiza cyo kugurisha Ibihe Byose Mubushinwa.
Hamwe na sisitemu nziza yizewe, ihagaze neza kandi ifasha abaguzi neza, urukurikirane rwibicuruzwa nibisubizo byakozwe numuryango wacu byoherezwa mubihugu n'uturere bitari bike kuriUbushinwa Sic Heater Silicon Carbide Gushyushya Ikintu na Sic Gushyushya, Kuba ibisubizo byambere byuruganda rwacu, ibisubizo byibisubizo byageragejwe kandi bidutsindira ibyemezo byuburambe.Kubindi bipimo nibintu byurutonde birambuye, ibuka gukanda buto kugirango ubone amakuru yinyongera.

Ibintu nyamukuru biranga grafite:

1. uburinganire bwubushyuhe.

2. amashanyarazi meza kandi umutwaro mwinshi w'amashanyarazi.

3. Kurwanya ruswa.

4. kutaboneka.

5. ubuziranenge bwimiti.

6. imbaraga za mashini nyinshi.

Ibyiza ni ingufu zikoresha ingufu, agaciro gakomeye no kubungabunga bike.Turashobora kubyara anti-okiside hamwe nigihe kirekire cyo gushushanya grafite ingirakamaro, ibishushanyo mbonera hamwe nibice byose bishyushya.

Ibipimo nyamukuru byubushyuhe bwa grafite

Ibisobanuro bya tekiniki	Semicera-M3
Ubucucike bwinshi (g / cm3)	851.85
Ibirimo ivu (PPM)	00500
Gukomera ku nkombe	≥45
Kurwanya Byihariye (μ.Ω.m)	≤12
Imbaraga zoroshye (Mpa)	≥40
Imbaraga Zikomeretsa (Mpa)	≥70
Icyiza.Ingano y'ibinyampeke (μm)	≤43
Coefficient yo Kwagura Ubushyuhe Mm / ° C.	≤4.4 * 10-6

MOCVD Substrate Ubushyuhe_ Ibikoresho byo gushyushya MOCVD
Hamwe na sisitemu nziza yizewe, ihagaze neza kandi ifashwa neza nabaguzi, urukurikirane rwibicuruzwa nibisubizo byakozwe nishirahamwe ryacu byoherezwa mubihugu ndetse no mukarere kitari gito kubiciro bito bya Tubular Shape Sic Heater Silicon Carbide Heating Element, Murakaza neza kugirango mutegure igihe kirekire- igihe cyo gushyingiranwa natwe.Igiciro cyiza cyo kugurisha Ibihe Byose Mubushinwa.
Igiciro gito kuriUbushinwa Sic Heater Silicon Carbide Gushyushya Ikintu na Sic Gushyushya, Kuba ibisubizo byambere byuruganda rwacu, ibisubizo byibisubizo byageragejwe kandi bidutsindira ibyemezo byuburambe.Kubindi bipimo nibintu byurutonde birambuye, ibuka gukanda buto kugirango ubone amakuru yinyongera.