Mu ruganda rwa semiconductor, cyane cyane mu gisekuru cya gatatu cya semiconductor (mugari wa bandgap semiconductor) urwego rwinganda, hariho substrate naepitaxialibice. Ni ubuhe busobanuro bwaepitaxialurwego? Ni irihe tandukaniro riri hagati ya substrate na substrate?
Substrate ni awaferbikozwe muri semiconductor ibikoresho bimwe bya kristu. Substrate irashobora kwinjira muburyo butaziguyewaferguhuza guhuza kubyara ibikoresho bya semiconductor, cyangwa birashobora gutunganywa naepitaxialinzira yo kubyara epitaxial wafers. Substrate ni hepfo yawafer. ariko bikozwe muburyo bwinyuma), kandi shingiro itwara ibikorwa byose byingoboka (skyscraper muri chip yubatswe kuri substrate).
Epitaxy bivuga inzira yo gukura kristu nshya imwe kuri sisitemu imwe ya kristu yatunganijwe neza mugukata, gusya, gusya, nibindi. (homoepitaxial cyangwa heteroepitaxial).
Kubera ko urwego rushya rwa kristaliste rukura rugenda rwiyongera kuri substrate ya kristu, byitwa epitaxial layer (mubisanzwe microne nyinshi zibyibushye. Fata silikoni nkurugero: igisobanuro cyo gukura kwa silicon epitaxial nukuzamura urwego rwa kirisiti hamwe nuburinganire bwimiterere ya lattice kuri silicon imwe ya kristal substrate hamwe nicyerekezo runaka cya kirisiti hamwe nuburwanya butandukanye hamwe nubunini butandukanye nka substrate), hamwe na substrate hamwe na epitaxial layer bita epitaxial wafer (epitaxial wafer = epitaxial layer + substrate). Gukora ibikoresho bikorwa kuri epitaxial layer.
Epitaxiality igabanijwemo homoepitaxiality na heteroepitaxiality. Homoepitaxiality nugukura epitaxial layer yibintu bimwe na substrate kuri substrate. Ni ubuhe busobanuro bwa homoepitaxiality? - Kunoza ibicuruzwa bihamye kandi byizewe. Nubwo homoepitaxiality ari ugukura epitaxial layer yibintu bimwe na substrate, nubwo ibikoresho ari bimwe, birashobora kuzamura ubuziranenge bwibintu hamwe nuburinganire bwubuso bwa wafer. Ugereranije na waferi isennye yatunganijwe no gukanika imashini, substrate yatunganijwe na epitaxiality ifite ubuso buhanitse, isuku nyinshi, inenge nkeya, hamwe n’umwanda muke. Kubwibyo, kurwanya birasa cyane, kandi biroroshye kugenzura inenge zubuso nkibice byo hejuru, gutondekanya amakosa, no gutandukana. Epitaxy ntabwo itezimbere imikorere yibicuruzwa gusa, ahubwo inemeza ibicuruzwa bihamye kandi byizewe.
Ni izihe nyungu zo gukora urundi rwego rwa silicon atom epitaxial kuri silicon wafer substrate? Mubikorwa bya silicon ya CMOS, gukura kwa epitaxial (EPI, epitaxial) kuri wafer substrate ni intambwe ikomeye cyane.
1. Kunoza ubwiza bwa kristu
Inenge ya mbere yubusembwa nubuhumane: Wafer substrate irashobora kugira inenge n umwanda mugihe cyo gukora. Iterambere ryigice cya epitaxial rirashobora kubyara ubuziranenge bwo hejuru, bufite inenge nke hamwe n’umwanda-umwe-umwe wa kirisiti ya silikoni ya silicon kuri substrate, ifite akamaro kanini mugukora ibikoresho bizakurikiraho. Imiterere ya kristu imwe: Gukura kwa Epitaxial birashobora gutuma imiterere imwe ya kirisiti imwe, kugabanya ingaruka zimbibi zintete hamwe nubusembwa mubikoresho bya substrate, bityo bikazamura ubwiza bwa kristu ya wafer yose.
2. Kunoza imikorere y'amashanyarazi
Hindura ibikoresho biranga ibikoresho: Mugukuza epitaxial layer kuri substrate, kwibanda kwa doping nubwoko bwa silicon birashobora kugenzurwa neza kugirango hongerwe ingufu mumashanyarazi. Kurugero, doping ya epitaxial layer irashobora guhindura neza voltage yumupaka nibindi bikoresho byamashanyarazi bya MOSFET. Mugabanye imiyoboro yamenetse: Epitaxial yo murwego rwohejuru ifite ubucucike buke, bufasha kugabanya imiyoboro yamenetse mugikoresho, bityo bikazamura imikorere nubwizerwe bwigikoresho.
3. Shigikira inzira igezweho
Kugabanya ingano yimiterere: Mubintu bito bito (nka 7nm, 5nm), ubunini bwibikoresho bikomeza kugabanuka, bisaba ibikoresho byinshi binonosoye kandi byujuje ubuziranenge. Epitaxial yiterambere rya tekinoroji irashobora kuzuza ibyo bisabwa kandi igashyigikira imikorere-yubukorikori buhanitse. Kunoza imbaraga zo kumeneka: Igice cya epitaxial kirashobora gushushanywa kugirango habeho imbaraga nyinshi zo kumeneka, zikaba ari ingenzi mu gukora ibikoresho bifite ingufu nyinshi n’amashanyarazi menshi. Kurugero, mubikoresho byamashanyarazi, epitaxial layer irashobora kongera imbaraga za voltage yamashanyarazi kandi ikongerera umutekano muke.
4. Gutunganya guhuza hamwe nuburyo butandukanye
Imiterere-yuburyo bwinshi: Ikoranabuhanga ryikura rya Epitaxial ryemerera ibyiciro byinshi guhingwa kuri substrate, kandi ibice bitandukanye bishobora kugira doping yibanze hamwe nubwoko butandukanye. Ibi bifasha cyane mugukora ibikoresho bigoye bya CMOS no kugera kubice bitatu. Ubwuzuzanye: Igikorwa cyo gukura epitaxial kirahuza cyane nibikorwa bisanzwe byo gukora CMOS kandi birashobora kwinjizwa muburyo bworoshye bwo gukora bidahinduye cyane umurongo wibikorwa.
Igihe cyo kohereza: Nyakanga-16-2024