Semicera ya P yo mu bwoko bwa SiC Substrate Wafer nigice cyingenzi mugutezimbere ibikoresho bya elegitoroniki na optoelectronic. Izi waferi zabugenewe kugirango zitange imikorere yongerewe imbaraga mumbaraga nyinshi nubushyuhe bwo hejuru, bifasha kwiyongera kubintu bikenewe kandi biramba.
Ubwoko bwa P-doping muri wafers yacu ya SiC itanga uburyo bwiza bwo gutwara amashanyarazi no gutwara ibicuruzwa bitwara. Ibi bituma bikenerwa cyane cyane mubisabwa muri electronics power, LEDs, na Photovoltaic selile, aho gutakaza ingufu nke no gukora neza birakomeye.
Yakozwe hamwe nubuziranenge bwo hejuru kandi bwuzuye, Semicera ya P yo mu bwoko bwa P ya SiC itanga uburinganire buhebuje hamwe nubunini buke. Ibi biranga ni ingenzi mu nganda aho guhuzagurika no kwizerwa ari ngombwa, nk'ikirere, ibinyabiziga, ndetse n'ingufu zishobora kongera ingufu.
Ubwitange bwa Semicera mu guhanga udushya no kuba indashyikirwa bugaragarira mu bwoko bwa P-SiC Substrate Wafer. Muguhuza ibyo byuma mubikorwa byumusaruro wawe, uremeza ko ibikoresho byawe byungukira kumiterere idasanzwe yubushyuhe n amashanyarazi ya SiC, ibafasha gukora neza mubihe bitoroshye.
Gushora imari muri P-ubwoko bwa SiC Substrate Wafer bisobanura guhitamo ibicuruzwa bihuza siyanse yubumenyi bugezweho nubuhanga bwitondewe. Semicera yitangiye gushyigikira igisekuru kizaza cya tekinoroji ya elegitoroniki na optoelectronic, itanga ibice byingenzi bikenewe kugirango ugere ku ntsinzi yawe munganda.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
