P-Ubwoko bwa SiC Substrate Wafer

Ibisobanuro bigufi:

Semicera ya P yo mu bwoko bwa SiC Substrate Wafer ikozwe muburyo bwa elegitoroniki na optoelectronic progaramu. Iyi wafer itanga imiyoboro idasanzwe hamwe nubushyuhe bwumuriro, bigatuma iba nziza kubikoresho bikora neza. Hamwe na Semicera, tegereza neza kandi byizewe muri P-ubwoko bwa SiC substrate wafers.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Semicera ya P yo mu bwoko bwa SiC Substrate Wafer nigice cyingenzi mugutezimbere ibikoresho bya elegitoroniki na optoelectronic. Izi waferi zabugenewe kugirango zitange imikorere yongerewe imbaraga mumbaraga nyinshi nubushyuhe bwo hejuru, bifasha kwiyongera kubintu bikenewe kandi biramba.

Ubwoko bwa P-doping muri wafers yacu ya SiC itanga uburyo bwiza bwo gutwara amashanyarazi no gutwara ibicuruzwa bitwara. Ibi bituma bikenerwa cyane cyane mubisabwa muri electronics power, LEDs, na Photovoltaic selile, aho gutakaza ingufu nke no gukora neza birakomeye.

Yakozwe hamwe nubuziranenge bwo hejuru kandi bwuzuye, Semicera ya P yo mu bwoko bwa P ya SiC itanga uburinganire buhebuje hamwe nubunini buke. Ibi biranga ni ingenzi mu nganda aho guhuzagurika no kwizerwa ari ngombwa, nk'ikirere, ibinyabiziga, ndetse n'ingufu zishobora kongera ingufu.

Ubwitange bwa Semicera mu guhanga udushya no kuba indashyikirwa bugaragarira mu bwoko bwa P-SiC Substrate Wafer. Muguhuza ibyo byuma mubikorwa byumusaruro wawe, uremeza ko ibikoresho byawe byungukira kumiterere idasanzwe yubushyuhe n amashanyarazi ya SiC, ibafasha gukora neza mubihe bitoroshye.

Gushora imari muri P-ubwoko bwa SiC Substrate Wafer bisobanura guhitamo ibicuruzwa bihuza siyanse yubumenyi bugezweho nubuhanga bwitondewe. Semicera yitangiye gushyigikira igisekuru kizaza cya tekinoroji ya elegitoroniki na optoelectronic, itanga ibice byingenzi bikenewe kugirango ugere ku ntsinzi yawe munganda.

Ibintu	Umusaruro	Ubushakashatsi	Dummy
Ibipimo bya Crystal
Polytype	4H
Ikosa ryerekana icyerekezo	<11-20> 4 ± 0.15 °
Ibipimo by'amashanyarazi
Dopant	Ubwoko bwa Azote
Kurwanya	0.015-0.025ohm · cm
Ibipimo bya mashini
Diameter	150.0 ± 0.2mm
Umubyimba	350 ± 25 mm
Icyerekezo cyibanze	[1-100] ± 5 °
Uburebure bwibanze	47.5 ± 1.5mm
Igice cya kabiri	Nta na kimwe
TTV	≤5 mm	≤10 mm	≤15 mm
LTV	≤3 μm (5mm * 5mm)	≤5 μm (5mm * 5mm)	≤10 μ m (5mm * 5mm)
Umuheto	-15 mm ~ 15 mm	-35μm ~ 35μm	-45μm ~ 45μm
Intambara	≤35 mm	≤45 mm	≤55 mm
Imbere (Si-face) ubukana (AFM)	Ra≤0.2nm (5μm * 5μm)
Imiterere
Ubucucike bwa Micropipe	<1 ea / cm2	<10 ea / cm2	<15 ea / cm2
Umwanda	≤5E10atoms / cm2		NA
BPD	≤1500 ea / cm2	0003000 ea / cm2	NA
TSD	≤500 ea / cm2	0001000 ea / cm2	NA
Ubwiza bw'imbere
Imbere	Si
Kurangiza	Si-face CMP
Ibice	≤60ea / wafer (ubunini≥0.3μm)	NA
Igishushanyo	≤5ea / mm. Uburebure bwuzuye ≤Ibipimo	Uburebure bwuzuye≤2 * Diameter	NA
Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza	Nta na kimwe		NA
Imipira yimpande / ibyerekana / kuvunika / isahani	Nta na kimwe
Agace ka polytype	Nta na kimwe	Agace kegeranye ≤20%	Agace kegeranye ≤30%
Ikimenyetso cya laser imbere	Nta na kimwe
Inyuma Yinyuma
Kurangiza	C-isura CMP
Igishushanyo	≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter	NA
Inenge zinyuma (chips / indents)	Nta na kimwe
Inyuma yinyuma	Ra≤0.2nm (5μm * 5μm)
Ikimenyetso cya laser inyuma	Mm 1 (uhereye hejuru)
Impande
Impande	Chamfer
Gupakira
Gupakira	Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi
* Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD.