CVD Bulk Silicon Carbide (SiC)
Incamake:CVDkarubide ya silicon nyinshi (SiC)ni ibikoresho bishakishwa cyane mubikoresho byo mu bwoko bwa plasma, gutunganya ubushyuhe bwihuse (RTP), nibindi bikorwa byo gukora igice cya kabiri. Imiterere yihariye ya mashini, imiti, nubushyuhe ituma iba ibikoresho byiza bya tekinoroji igezweho isaba ubuziranenge kandi burambye.
Porogaramu ya CVD Bulk SiC:Bulk SiC ni ingenzi cyane mu nganda zikoresha igice cya kabiri, cyane cyane muri sisitemu yo gutera plasma, aho ibice nk'impeta yibanda, ibyuma byogeramo gaze, impeta zo ku nkombe, hamwe na platine byungukira kuri SiC idasanzwe yo kurwanya ruswa no gutwara ubushyuhe. Imikoreshereze yacyo igera kuriRTPsisitemu bitewe nubushobozi bwa SiC bwo guhangana nihindagurika ryubushyuhe bwihuse nta kwangirika gukomeye.
Usibye ibikoresho byo gutobora, CVDbyinshi SiCni byiza mu itanura rya diffuzione hamwe no gukura kwa kristu, aho bisabwa guhagarara neza kwumuriro no kurwanya ibidukikije bikaze. Ibiranga bituma SiC ibikoresho byo guhitamo ibisabwa cyane birimo ubushyuhe bwinshi na gaze yangirika, nkibirimo chlorine na fluor.
Ibyiza bya CVD Bulk SiC Ibigize:
•Ubucucike bukabije:Nubucucike bwa 3,2 g / cm³,CVD byinshi SiCibice birwanya cyane kwambara ningaruka za mashini.
•Ubushyuhe bwo hejuru bwa Thermal:Gutanga ubushyuhe bwa 300 W / m · K, ubwinshi bwa SiC icunga neza ubushyuhe, bigatuma biba byiza kubice byerekanwe nubushyuhe bukabije.
•Kurwanya Imiti idasanzwe:Ubushobozi buke bwa SiC hamwe na gaze ya gaze, harimo chlorine hamwe n’imiti ikomoka kuri fluor, bituma ubuzima bumara igihe kirekire.
•Guhindura Kurwanya: CVD byinshi bya SiCKurwanya birashobora guhindurwa muburyo bwa 10⁻² - 10⁴ Ω-cm, bigatuma bihuza nibisabwa byihariye byo gukora hamwe na semiconductor.
•Coefficient yo Kwagura Ubushyuhe:Hamwe na coefficente yo kwagura ubushyuhe bwa 4.8 x 10⁻⁶ / ° C (25-1000 ° C), ubwinshi bwa CVD SiC irwanya ihungabana ryumuriro, ikomeza guhagarara neza ndetse no mugihe cyizuba ryinshi no gukonja.
•Kuramba muri Plasma:Guhura na plasma na gaze reaction byanze bikunze mugikorwa cya semiconductor, arikoCVD byinshi SiCitanga imbaraga zo kurwanya ruswa no gutesha agaciro, kugabanya inshuro zisimburwa nigiciro cyo kubungabunga muri rusange.
Ibisobanuro bya tekiniki:
•Diameter:Kurenza mm 305
•Kurwanya:Guhindurwa muri 10⁻² - 10⁴ Ω-cm
•Ubucucike:3.2 g / cm³
•Amashanyarazi:300 W / m · K.
•Coefficient yo Kwagura Ubushyuhe:4.8 x 10⁻⁶ / ° C (25–1000 ° C)
Guhindura no guhinduka:KuriSemicera Semiconductor, twumva ko buri semiconductor progaramu ishobora gusaba ibisobanuro bitandukanye. Niyo mpamvu ibice byacu bya CVD byinshi bya SiC birashobora guhindurwa rwose, hamwe nibishobora guhinduka kandi bigahinduka kugirango bikwiranye nibikoresho byawe. Waba utezimbere sisitemu yo guterura plasma cyangwa ushakisha ibice biramba muri RTP cyangwa ikwirakwizwa, CVD ubwinshi bwa SiC itanga imikorere itagereranywa.
