Isosiyete yacu iratangaSiCserivisi zitunganyirizwa hejuru ya grafite, ceramics nibindi bikoresho hakoreshejwe uburyo bwa CVD, kugirango imyuka idasanzwe irimo karubone na silikoni ishobora kwitwara mubushyuhe bwinshi kugirango ibone molekile nziza ya Sic, ishobora gushyirwa hejuru yibikoresho bisize kugirango ikore aKurinda SiCkuri epitaxy barrel ubwoko bwa hy pnotic.
Ibyingenzi byingenzi:
1 .Ubuziranenge bwera SiC yashushanyije grafite
2. Kurwanya ubushyuhe burenze & uburinganire bwumuriro
3. NibyizaSiC ya kirisitiKuri Ubuso
4. Kuramba cyane kurwanya isuku yimiti

Ibyingenzi byingenzi byaCVD-SIC
Ibiranga SiC-CVD | ||
Imiterere ya Crystal | FCC β icyiciro | |
Ubucucike | g / cm ³ | 3.21 |
Gukomera | Vickers gukomera | 2500 |
Ingano y'ibinyampeke | μm | 2 ~ 10 |
Ubuziranenge bwa Shimi | % | 99.99995 |
Ubushyuhe | J · kg-1 · K-1 | 640 |
Ubushyuhe bwo hejuru | ℃ | 2700 |
Imbaraga zidasanzwe | MPa (RT-amanota 4) | 415 |
Umusore Modulus | Gpa (4pt yunamye, 1300 ℃) | 430 |
Kwagura Ubushyuhe (CTE) | 10-6K-1 | 4.5 |
Amashanyarazi | (W / mK) | 300 |









-
Ifu yuzuye silicon karbide ifu ya semiconducto ...
-
6 ”Umwikorezi wa Wafer kuri Aixtron G5
-
Ubushyuhe bwo hejuru SiC-Yashizweho na Epitaxial Reactor B ...
-
Graphite Susceptor hamwe na Silicon Carbide Coating ...
-
Igice cya kabiri Igice cya Baffles yo hepfo muri Epitaxia ...
-
SiC Yashushanyijeho Graphite Base Susceptors ya MOCVD