Ibisobanuro
MOCVD Substrate Ubushyuhe, Ibikoresho byo gushyushya MOCVD
Igishushanyo cya Graphite:
Ibikoresho bishyushya bya grafite bikoreshwa mu itanura ryubushyuhe bwo hejuru hamwe nubushyuhe bwageze kuri dogere 2200 ahantu hatuje na dogere 3000 muri gaze ya deoxidiside kandi yashyizwemo.
Ibintu nyamukuru biranga grafite
1. uburinganire bwubushyuhe.
2. amashanyarazi meza kandi umutwaro mwinshi w'amashanyarazi.
3. Kurwanya ruswa.
4. kutaboneka.
5. ubuziranenge bwimiti.
6. imbaraga za mashini nyinshi.
Ibyiza ni ingufu zikoresha ingufu, agaciro gakomeye no kubungabunga bike.
Turashobora kubyara anti-okiside hamwe nigihe kirekire cyo gushushanya grafite ingirakamaro, ibishushanyo mbonera hamwe nibice byose bishyushya.
Igishushanyo mbonera
Ibyiza: Kurwanya ubushyuhe bwinshi
Gusaba: MOCVD / Itanura rya Vacuum / Zone ishyushye
Ubucucike bwinshi: 1.68-1.91g / cm3
Imbaraga zoroshye: 30-46Mpa
Kurwanya: 7-12μΩm
Ibipimo nyamukuru byubushyuhe bwa grafite
| Ibisobanuro bya tekiniki | VET-M3 |
| Ubucucike bwinshi (g / cm3) | 851.85 |
| Ibirimo ivu (PPM) | 00500 |
| Gukomera ku nkombe | ≥45 |
| Kurwanya Byihariye (μ.Ω.m) | ≤12 |
| Imbaraga zoroshye (Mpa) | ≥40 |
| Imbaraga Zikomeretsa (Mpa) | ≥70 |
| Icyiza. Ingano y'ibinyampeke (μm) | ≤43 |
| Coefficient yo Kwagura Ubushyuhe Mm / ° C. | ≤4.4 * 10-6 |
Ubushyuhe bwa Graphite kumatanura yamashanyarazi bufite imiterere yo kurwanya ubushyuhe, kurwanya okiside, gukoresha amashanyarazi neza nubukanishi bwiza. Turashobora gukora imashini zitandukanye zishyushya grafite dukurikije ibishushanyo byabakiriya.
Umwirondoro w'isosiyete
WeiTai Energy Technology Co., Ltd nisoko ritanga amasoko meza ya semiconductor ceramics kandi rukaba rukora uruganda rukumbi mu Bushinwa rushobora icyarimwe gutanga icyarimwe cyiza cya silicon karbide ceramic (cyane cyane Recrystallized SiC) hamwe na CVD SiC. Mubyongeyeho, isosiyete yacu yiyemeje kandi mumirima yubutaka nka alumina, nitride ya aluminium, zirconi, na nitride ya silicon, nibindi.
Ibicuruzwa byacu byingenzi birimo: silicon carbide etching disiki, ubwato bwa silicon karbide, ubwato bwa silicon karbide wafer (Photovoltaic & Semiconductor), itanura ya carbide itanura, silikoni karbide cantilever, amashanyarazi ya karuboni, hamwe na CVD SiC hamwe na TaC gutwikira. Ibicuruzwa bikoreshwa cyane cyane munganda za semiconductor ninganda zifotora, nkibikoresho byo gukura kristu, epitaxy, etching, gupakira, gutwikira no gutwika itanura, nibindi.
Isosiyete yacu ifite ibikoresho byuzuye byo kubyaza umusaruro nko kubumba, gucumura, gutunganya, ibikoresho byo gutwikira, nibindi, bishobora kuzuza amahuza yose akenewe yumusaruro wibicuruzwa kandi bikagenzurwa cyane nubwiza bwibicuruzwa; Gahunda nziza yumusaruro irashobora gutoranywa ukurikije ibikenerwa nibicuruzwa, bikavamo igiciro gito no guha abakiriya ibicuruzwa birushanwe; Turashobora gukora neza kandi neza gahunda yumusaruro dushingiye kubisabwa byo gutanga ibicuruzwa kandi dufatanije na sisitemu yo gucunga ibicuruzwa kumurongo, guha abakiriya igihe cyihuse kandi cyizewe.
