Si Substrate

Ibisobanuro bigufi:

Hamwe nubusobanuro buhanitse kandi bwera cyane, Si Substrate ya Semicera itanga imikorere yizewe kandi ihamye mubikorwa bikomeye, harimo Epi-Wafer na Gallium Oxide (Ga2O3). Yateguwe kugirango ishyigikire umusaruro wa mikorobe yateye imbere, iyi substrate itanga ubwuzuzanye budasanzwe kandi butajegajega, bigatuma iba ibikoresho byingenzi byikoranabuhanga rigezweho mu itumanaho, ibinyabiziga, n’inganda.


Ibicuruzwa birambuye

Ibicuruzwa

Si Substrate ya Semicera nikintu cyingenzi mugukora ibikoresho bya semiconductor ikora cyane. Yakozwe na Silicon (Si) ifite isuku nyinshi, iyi substrate itanga uburinganire budasanzwe, itajegajega, hamwe nubushobozi buhebuje, bigatuma biba byiza muburyo butandukanye bwogukoresha murwego rwo hejuru. Yaba ikoreshwa muri Si Wafer, SiC Substrate, SOI Wafer, cyangwa SiN Substrate, Semicera Si Substrate itanga ubuziranenge kandi bunoze kugirango ihuze ibyifuzo bya elegitoroniki n'ibikoresho bigezweho bigenda byiyongera.

Imikorere idasanzwe hamwe nubuziranenge buhanitse kandi bwuzuye

Si Substrate ya Semicera ikorwa hifashishijwe inzira zigezweho zitanga isuku nini kandi igenzura neza. Substrate ikora nk'urufatiro rwo gukora ibikoresho bitandukanye bikora neza, harimo Epi-Wafers na AlN Wafers. Ubusobanuro hamwe nuburinganire bwa Si Substrate bituma ihitamo neza mugukora firime yoroheje ya epitaxial ibice nibindi bice byingenzi bikoreshwa mugukora ibisekuruza bizaza. Waba ukorana na Gallium Oxide (Ga2O3) cyangwa ibindi bikoresho bigezweho, Si Substrate ya Semicera itanga urwego rwo hejuru rwo kwizerwa no gukora.

Porogaramu mu Gukora Semiconductor

Mu nganda za semiconductor, Si Substrate yo muri Semicera ikoreshwa muburyo butandukanye bwibisabwa, harimo umusaruro wa Si Wafer na SiC Substrate, aho itanga umusingi uhamye, wizewe wo gushira ibice bikora. Substrate igira uruhare runini muguhimba SOI Wafers (Silicon On Insulator), ningirakamaro kuri microelectronics yateye imbere hamwe na sisitemu ihuriweho. Byongeye kandi, Epi-Wafers (epitaxial wafers) yubatswe kuri Si Substrates ni ntangarugero mu gukora ibikoresho bya semiconductor ikora cyane nka tristoriste yamashanyarazi, diode, hamwe n’umuzunguruko.

Si Substrate kandi ishyigikira gukora ibikoresho ukoresheje Gallium Oxide (Ga2O3), ibikoresho bitanga umurongo mugari wifashishwa mugukoresha ingufu nyinshi muri electronics. Byongeye kandi, guhuza Si Substrate ya Semicera na AlN Wafers hamwe nandi masoko yateye imbere yemeza ko ishobora kuzuza ibisabwa bitandukanye by’inganda zikorana buhanga, bityo bikaba igisubizo cyiza cyo gukora ibikoresho bigezweho mu itumanaho, mu modoka, no mu nganda. .

Ubwiza bwizewe kandi buhoraho kubwubuhanga buhanitse

Si Substrate ya Semicera ikozwe neza kugirango ihuze ibyifuzo bikomeye byo guhimba semiconductor. Ubusugire bwacyo budasanzwe hamwe nubuziranenge bwo hejuru butuma buba ibikoresho byiza byo gukoresha muri sisitemu ya cassette yo gutwara wafer, kimwe no gukora ibice byuzuye neza mubikoresho bya semiconductor. Ubushobozi bwa substrate bwo kugumana ubuziranenge buhoraho muburyo butandukanye butanga inenge nkeya, kuzamura umusaruro nigikorwa cyibicuruzwa byanyuma.

Hamwe nubushuhe buhebuje bwumuriro, imbaraga za mashini, hamwe nubuziranenge bwinshi, Si Substrate ya Semicera nigikoresho cyo guhitamo kubakora ibicuruzwa bashaka kugera ku bipimo bihanitse byerekana neza, kwiringirwa, no gukora mubikorwa bya semiconductor.

Hitamo Semicera ya Si Substrate yo Kwera-Byinshi, Ibisubizo Byinshi-Byakemutse

Ku bakora inganda za semiconductor, Si Substrate yo muri Semicera itanga igisubizo gikomeye, cyiza cyo murwego rwo hejuru kubisabwa bitandukanye, kuva umusaruro wa Si Wafer kugeza kurema Epi-Wafers na SOI Wafers. Hamwe nubuziranenge butagereranywa, busobanutse, kandi bwizewe, iyi substrate ituma habaho umusaruro wibikoresho bigezweho bya semiconductor, byemeza imikorere yigihe kirekire kandi neza. Hitamo Semicera kubyo ukeneye bya Si substrate, kandi wizere ibicuruzwa byagenewe guhuza ibyifuzo byikoranabuhanga ejo.

Ibintu

Umusaruro

Ubushakashatsi

Dummy

Ibipimo bya Crystal

Polytype

4H

Ikosa ryerekana icyerekezo

<11-20> 4 ± 0.15 °

Ibipimo by'amashanyarazi

Dopant

Ubwoko bwa Azote

Kurwanya

0.015-0.025ohm · cm

Ibipimo bya mashini

Diameter

150.0 ± 0.2mm

Umubyimba

350 ± 25 mm

Icyerekezo cyibanze

[1-100] ± 5 °

Uburebure bwibanze

47.5 ± 1.5mm

Igice cya kabiri

Nta na kimwe

TTV

≤5 mm

≤10 mm

≤15 mm

LTV

≤3 μm (5mm * 5mm)

≤5 μm (5mm * 5mm)

≤10 μ m (5mm * 5mm)

Umuheto

-15 mm ~ 15 mm

-35μm ~ 35μm

-45μm ~ 45μm

Intambara

≤35 mm

≤45 mm

≤55 mm

Imbere (Si-face) ubukana (AFM)

Ra≤0.2nm (5μm * 5μm)

Imiterere

Ubucucike bwa Micropipe

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Umwanda

≤5E10atoms / cm2

NA

BPD

≤1500 ea / cm2

0003000 ea / cm2

NA

TSD

≤500 ea / cm2

0001000 ea / cm2

NA

Ubwiza bw'imbere

Imbere

Si

Kurangiza

Si-face CMP

Ibice

≤60ea / wafer (ubunini≥0.3μm)

NA

Igishushanyo

≤5ea / mm. Uburebure bwuzuye ≤Ibipimo

Uburebure bwuzuye≤2 * Diameter

NA

Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza

Nta na kimwe

NA

Imipira yimpande / ibyerekana / kuvunika / isahani

Nta na kimwe

Agace ka polytype

Nta na kimwe

Agace kegeranye ≤20%

Agace kegeranye ≤30%

Ikimenyetso cya laser imbere

Nta na kimwe

Inyuma Yinyuma

Kurangiza

C-isura CMP

Igishushanyo

≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter

NA

Inenge zinyuma (chips / indents)

Nta na kimwe

Inyuma yinyuma

Ra≤0.2nm (5μm * 5μm)

Ikimenyetso cya laser inyuma

Mm 1 (uhereye hejuru)

Impande

Impande

Chamfer

Gupakira

Gupakira

Epi-yiteguye hamwe no gupakira vacuum

Gupakira cassette nyinshi

* Inyandiko : "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD.

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SiC wafers

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