SiC yashushanyijeho ubushyuhe bwa MOCVD K465i, epitaxial grafite ashyushya ibikoresho bya semiconductor

SiC yashushanyije igishushanyo mbonera cya MOCVD K465i, epitaxial grafite ashyushya ibikoresho bya semiconductor Ibikoresho Byerekanwe

Ibisobanuro bigufi:

Semicera Semiconductor niyambere itanga isoko kabuhariwe muri wafer kandi igezweho ikoreshwa neza. Twiyemeje gutanga ibicuruzwa byiza-byizewe, byizewe, kandi bishya mubikorwa byo gukora igice cya kabiri, inganda zifotora nizindi nzego zijyanye nayo.

Umurongo wibicuruzwa byacu birimo SiC / TaC wasize ibicuruzwa bya grafite nibicuruzwa bya ceramic, bikubiyemo ibikoresho bitandukanye nka karubide ya silicon, nitride ya silicon, na oxyde ya aluminium nibindi nibindi.

Nkumutanga wizewe, twumva akamaro k'ibikoreshwa mugikorwa cyo gukora, kandi twiyemeje gutanga ibicuruzwa byujuje ubuziranenge bwo hejuru kugirango ibyo abakiriya bacu bakeneye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibintu nyamukuru biranga grafite:

1. Guhuza imiterere yubushyuhe.

2. Umuyoboro mwiza w'amashanyarazi n'umutwaro mwinshi w'amashanyarazi.

3. Kurwanya ruswa.

4. kutaboneka.

5. Ubuziranenge bwimiti.

6. Imbaraga zikomeye.

Ibyiza ni ingufu zikoresha ingufu, agaciro gakomeye no kubungabunga bike. Turashobora kubyara anti-okiside hamwe nigihe kirekire cyo gushushanya grafite ingirakamaro, ibishushanyo mbonera hamwe nibice byose bishyushya.

Ibipimo nyamukuru byubushyuhe bwa grafite

Ibisobanuro bya tekiniki	VET-M3
Ubucucike bwinshi (g / cm3)	851.85
Ibirimo ivu (PPM)	00500
Gukomera ku nkombe	≥45
Kurwanya Byihariye (μ.Ω.m)	≤12
Imbaraga zoroshye (Mpa)	≥40
Imbaraga Zikomeretsa (Mpa)	≥70
Icyiza. Ingano y'ibinyampeke (μm)	≤43
Coefficient yo Kwagura Ubushyuhe Mm / ° C.	≤4.4 * 10-6