Graphite Susceptor hamwe na Silicon Carbide Coating, 8 wafer wafer

Ibisobanuro bigufi:

Ingufu za Semicera zitanga urutonde rwinshi rwa susceptors hamwe nibice bya grafite bigenewe reaction zitandukanye za epitaxy.

Binyuze mubufatanye bufatika hamwe na OEM iyobora inganda, ubuhanga bwibikoresho byinshi, hamwe nubushobozi buhanitse bwo gukora, Weitai atanga ibishushanyo mbonera byujuje ibisabwa byihariye byo gusaba. Ibyo twiyemeje kuba indashyikirwa byemeza ko wakiriye ibisubizo byiza bya epitaxy reaktor ikeneye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro

CVD-SiCifite ibiranga imiterere imwe, ibintu byegeranye, birwanya ubushyuhe bwinshi, birwanya okiside, isuku nyinshi, aside & alkali irwanya na organic reagent, hamwe nibintu bihamye byumubiri nubumara.

Ugereranije nibikoresho bya grafite bifite isuku nyinshi, grafite itangira okiside kuri 400C, bizatera igihombo cyifu bitewe na okiside, bikaviramo kwanduza ibidukikije kubikoresho bya periferi hamwe nicyumba cya vacuum, kandi byongera umwanda wibidukikije bifite isuku nyinshi.
Ariko,SiCIrashobora kugumya gutuza kumubiri na chimique kuri dogere 1600, Irakoreshwa cyane mubikorwa bigezweho, cyane cyane mubikorwa bya semiconductor.

CFGNBHXF

SFGHBZSF

Ibyingenzi

1 .Ubuziranenge bwera SiC yashushanyije grafite

2. Kurwanya ubushyuhe burenze & uburinganire bwumuriro

3. NibyizaSiC ya kirisitiKuri Ubuso

4. Kuramba cyane kurwanya isuku yimiti

Ibyingenzi byingenzi bya CVD-SIC Coatings:

SiC-CVD
Ubucucike	(g / cc)	3.21
Imbaraga zoroshye	(Mpa)	470
Kwiyongera k'ubushyuhe	(10-6 / K)	4
Amashanyarazi	(W / mK)	300

Gupakira no kohereza

Ubushobozi bwo gutanga:
10000 Igice / Ibice buri kwezi
Gupakira & Gutanga:
Gupakira: Bisanzwe & Gupakira bikomeye
Umufuka wuzuye + Agasanduku + Ikarito + Pallet
Icyambu:
Ningbo / Shenzhen / Shanghai
Igihe cyo kuyobora: