Silicon Carbide Cantilever Wafer Paddle

Ibisobanuro bigufi:

Semicera Silicon Carbide Cantilever Wafer Paddle itanga imbaraga zidasanzwe hamwe nubushyuhe bwumuriro, bigatuma biba byiza mubushyuhe bwo hejuru. Hamwe nigishushanyo mbonera cyacyo, iyi Wafer Paddle itanga imikorere yizewe. Semicera itanga iminsi 30 yo gutanga, yujuje ibyifuzo byawe byihuse kandi neza. Twandikire kubibazo!


Ibicuruzwa birambuye

Ibicuruzwa

SemiceraSiC Cantilever Wafer Paddleyashizweho kugirango ihuze ibyifuzo byinganda zigezweho. Ibiwafer paddleitanga imbaraga zubukanishi hamwe nubushyuhe bwumuriro, nibyingenzi mugukoresha wafers mubushyuhe bwo hejuru.

Igishushanyo cya SiC cantilever ituma hashyirwa neza wafer, bikagabanya ibyago byo kwangirika mugihe cyo gukemura. Ubushuhe bwayo bwinshi bwerekana neza ko wafer ikomeza guhagarara neza no mubihe bikabije, ibyo bikaba ari ngombwa mu gukomeza umusaruro.

Usibye ibyiza byubaka, SemiceraSiC Cantilever Wafer Paddleitanga kandi ibyiza muburemere no kuramba. Kubaka byoroheje byoroha kubyitwaramo no kwinjiza muri sisitemu zihari, mugihe ibikoresho byinshi bya SiC bitanga uburebure burambye mugihe gikenewe.

 Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho

Umutungo

Agaciro gasanzwe

Ubushyuhe bwo gukora (° C)

1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije)

Ibirimo

> 99,96%

Ibirimo Si kubuntu

<0.1%

Ubucucike bwinshi

2.60-2.70 g / cm3

Ikigaragara

<16%

Imbaraga zo kwikuramo

> 600 MPa

Imbaraga zikonje

80-90 MPa (20 ° C)

Imbaraga zunamye

90-100 MPa (1400 ° C)

Kwiyongera k'ubushyuhe @ 1500 ° C.

4.70 10-6/ ° C.

Ubushyuhe bwumuriro @ 1200 ° C.

23 W / m • K.

Modulus

240 GPa

Kurwanya ubushyuhe

Nibyiza cyane

0f75f96b9a8d9016a504c0c47e59375
Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
Inzu y'Ububiko bwa Semicera
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