Filime ya Silicon

Ibisobanuro bigufi:

Filime ya Silicon yakozwe na Semicera nigikoresho-cyiza cyane cyagenewe ibikoresho bitandukanye byateye imbere mubikorwa bya semiconductor na electronics. Iyi firime ikozwe muri silikoni yo mu rwego rwo hejuru, itanga uburinganire budasanzwe, ituze ry’umuriro, hamwe n’amashanyarazi, bigatuma iba igisubizo cyiza cyo kubika firime yoroheje, MEMS (Micro-Electro-Mechanical Systems), no guhimba ibikoresho bya semiconductor.


Ibicuruzwa birambuye

Ibicuruzwa

Filime ya Silicon yakozwe na Semicera nibikoresho byujuje ubuziranenge, bikozwe neza-byakozwe neza kugirango byuzuze ibisabwa bikenewe mu nganda za semiconductor. Yakozwe muri silicon isukuye, iki gisubizo cyoroshye cya firime gitanga uburinganire buhebuje, ubuziranenge bwinshi, hamwe nubushakashatsi budasanzwe bwamashanyarazi nubushyuhe. Nibyiza gukoreshwa mubikoresho bitandukanye bya semiconductor, harimo umusaruro wa Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, na Epi-Wafer. Filime ya Silicon ya Semicera itanga imikorere yizewe kandi ihamye, ikagira ibikoresho byingenzi bya mikorobe yateye imbere.

Ubwiza buhebuje nubushobozi bwo gukora Semiconductor

Filime ya Silicon ya Semicera izwiho imbaraga zidasanzwe zubukanishi, ituze ryinshi ryumuriro, hamwe nigipimo gito gifite inenge, ibyo byose nibyingenzi muguhimba ibyuma bikora neza cyane. Yaba ikoreshwa mugukora ibikoresho bya Gallium Oxide (Ga2O3), AlN Wafer, cyangwa Epi-Wafers, film itanga umusingi ukomeye wo gushira firime yoroheje no gukura kwa epitaxial. Ihuzwa nizindi nteruro ya semiconductor nka SiC Substrate na SOI Wafers ituma habaho kwishyira hamwe mubikorwa byinganda zisanzwe, bifasha kugumana umusaruro mwinshi hamwe nubwiza bwibicuruzwa bihoraho.

Porogaramu mu nganda za Semiconductor

Mu nganda ziciriritse, Filime ya Silicon ya Semicera ikoreshwa muburyo butandukanye, uhereye ku bicuruzwa bya Si Wafer na SOI Wafer kugeza ku mikoreshereze yihariye nka SiN Substrate na Epi-Wafer. Isuku ryinshi nubusobanuro bwiyi firime bituma biba ngombwa mugukora ibice bigezweho bikoreshwa muri byose kuva microprocessor hamwe na sisitemu ihuriweho kugeza ibikoresho bya optoelectronic.

Filime ya Silicon igira uruhare runini mubikorwa bya semiconductor nko gukura kwa epitaxial, guhuza wafer, no kubika firime. Ibintu byizewe bifite agaciro cyane cyane mubikorwa bisaba ibidukikije bigenzurwa cyane, nkubwiherero muri fabic semiconductor fabs. Byongeye kandi, Filime ya Silicon irashobora kwinjizwa muri sisitemu ya cassette kugirango ikoreshwe neza wafer no gutwara mugihe cyo gukora.

Igihe kirekire Kwizerwa no Guhoraho

Imwe mu nyungu zingenzi zo gukoresha Filime ya Silicon ya Semicera niyizerwa ryigihe kirekire. Hamwe nigihe kirekire cyiza kandi cyiza, iyi firime itanga igisubizo cyizewe kubidukikije byinshi. Yaba ikoreshwa mubikoresho bisobanutse neza cyangwa ibikoresho bya elegitoroniki bigezweho, Filime ya Silicon ya Semicera iremeza ko abayikora bashobora kugera kubikorwa byiza kandi byizewe mubicuruzwa byinshi.

Kuki Hitamo Filime ya Silicon?

Filime ya Silicon yo muri Semicera nibikoresho byingenzi mugukoresha porogaramu zigezweho mu nganda ziciriritse. Ibikorwa byayo-byiza cyane, harimo nubushyuhe buhebuje bwumuriro, ubuziranenge bwinshi, nimbaraga za mashini, bituma ihitamo neza kubabikora bashaka kugera kubipimo bihanitse mubikorwa bya semiconductor. Kuva kuri Si Wafer na SiC Substrate kugeza kubyara ibikoresho bya Gallium Oxide Ga2O3, iyi film itanga ubuziranenge nibikorwa bitagereranywa.

Hamwe na Filime ya Silicon ya Semicera, urashobora kwizera ibicuruzwa byujuje ibyifuzo byinganda zigezweho, bitanga umusingi wizewe kubisekuruza bizaza.

Ibintu

Umusaruro

Ubushakashatsi

Dummy

Ibipimo bya Crystal

Polytype

4H

Ikosa ryerekana icyerekezo

<11-20> 4 ± 0.15 °

Ibipimo by'amashanyarazi

Dopant

Ubwoko bwa Azote

Kurwanya

0.015-0.025ohm · cm

Ibipimo bya mashini

Diameter

150.0 ± 0.2mm

Umubyimba

350 ± 25 mm

Icyerekezo cyibanze

[1-100] ± 5 °

Uburebure bwibanze

47.5 ± 1.5mm

Igice cya kabiri

Nta na kimwe

TTV

≤5 mm

≤10 mm

≤15 mm

LTV

≤3 μm (5mm * 5mm)

≤5 μm (5mm * 5mm)

≤10 μ m (5mm * 5mm)

Umuheto

-15 mm ~ 15 mm

-35μm ~ 35μm

-45μm ~ 45μm

Intambara

≤35 mm

≤45 mm

≤55 mm

Imbere (Si-face) ubukana (AFM)

Ra≤0.2nm (5μm * 5μm)

Imiterere

Ubucucike bwa Micropipe

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Umwanda

≤5E10atoms / cm2

NA

BPD

≤1500 ea / cm2

0003000 ea / cm2

NA

TSD

≤500 ea / cm2

0001000 ea / cm2

NA

Ubwiza bw'imbere

Imbere

Si

Kurangiza

Si-face CMP

Ibice

≤60ea / wafer (ubunini≥0.3μm)

NA

Igishushanyo

≤5ea / mm. Uburebure bwuzuye ≤Ibipimo

Uburebure bwuzuye≤2 * Diameter

NA

Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza

Nta na kimwe

NA

Imipira yimpande / ibyerekana / kuvunika / isahani

Nta na kimwe

Agace ka polytype

Nta na kimwe

Agace kegeranye ≤20%

Agace kegeranye ≤30%

Ikimenyetso cya laser imbere

Nta na kimwe

Inyuma Yinyuma

Kurangiza

C-isura CMP

Igishushanyo

≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter

NA

Inenge zinyuma (chips / indents)

Nta na kimwe

Inyuma yinyuma

Ra≤0.2nm (5μm * 5μm)

Ikimenyetso cya laser inyuma

Mm 1 (uhereye hejuru)

Impande

Impande

Chamfer

Gupakira

Gupakira

Epi-yiteguye hamwe no gupakira vacuum

Gupakira cassette nyinshi

* Inyandiko : "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD.

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SiC wafers

  • Mbere:
  • Ibikurikira: