Silicon-Yinjijwe na Caricon Carbide (SiC) Paddle na Wafer Carrier

Silicon-Yinjijwemo na Silicon Carbide (SiC) Paddle na Wafer Carrier Yerekanwe Ishusho

Ibisobanuro bigufi:

Silicon-Impregnated Silicon Carbide (SiC) Paddle na Wafer Carrier ni ibikoresho bikora cyane bigizwe no kwinjiza silikoni muri matrike ya silicon yongeye gushyirwaho kandi ikavurwa bidasanzwe. Ibi bikoresho bikomatanya imbaraga nyinshi hamwe nubushyuhe bwo hejuru bwo kwihanganira karubide ya silicon yongeye gushyirwaho hamwe nogukora neza kwimikorere ya silicon, kandi ikerekana imikorere myiza mubihe bikabije. Ikoreshwa cyane mubijyanye no kuvura ubushyuhe bwa semiconductor, cyane cyane mubidukikije bisaba ubushyuhe bwinshi, umuvuduko mwinshi hamwe no kwihanganira kwambara cyane, kandi ni ibikoresho byiza byo gukora ibice bivura ubushyuhe mubikorwa byo gukora igice cya kabiri.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Incamake y'ibicuruzwa

UwitekaSilicon-Yinjijwe na Caricon Carbide (SiC) Paddle na Wafer Carrierni injeniyeri kugirango ihuze ibisabwa bisabwa na semiconductor yumuriro utunganya porogaramu. Igicuruzwa cyakozwe na SiC gifite isuku nyinshi kandi kongererwa imbaraga binyuze mu kwinjiza silicon, iki gicuruzwa gitanga uburyo bwihariye bwo gukora ubushyuhe bwo hejuru, ubushyuhe bwiza bwumuriro, kurwanya ruswa, nimbaraga zidasanzwe za mashini.

Muguhuza ubumenyi bugezweho bwa siyanse hamwe ninganda zuzuye, iki gisubizo cyemeza imikorere isumba iyindi, kwizerwa, no kuramba kubakora inganda.

Ibintu by'ingenzi

1.Ibidasanzwe byo Kurwanya Ubushyuhe

Hamwe no gushonga kurenga 2700 ° C, ibikoresho bya SiC mubisanzwe birahagaze neza mubushyuhe bukabije. Kwinjiza silicon byongera imbaraga zubushyuhe bwumuriro, bikabasha kwihanganira igihe kinini cyo guhura nubushyuhe bwo hejuru nta gucika intege kwimiterere cyangwa kwangirika kwimikorere.

2.Ubushuhe buhebuje

Ubushuhe budasanzwe bwumuriro wa silicon-yatewe na SiC itanga ikwirakwizwa ryubushyuhe bumwe, bigabanya imihangayiko yumuriro mugihe gikomeye cyo gutunganya. Uyu mutungo wongerera ibikoresho ubuzima kandi ukagabanya igihe cyo gukora, bigatuma biba byiza gutunganya ubushyuhe bwo hejuru.

3.Oxidation hamwe no Kurwanya Ruswa

Igikoresho gikomeye cya silicon oxyde ikora muburyo busanzwe hejuru, itanga imbaraga zidasanzwe zo kurwanya okiside na ruswa. Ibi byemeza igihe kirekire kwizerwa mubikorwa bikaze bikora, bikarinda ibintu hamwe nibice bikikije.

4.Imbaraga Zimashini Zikomeye no Kwambara Kurwanya

SiC yatewe na Silicon igaragaramo imbaraga zidasanzwe zo kwikuramo no kwambara, ikomeza uburinganire bwimiterere munsi yuburemere bwinshi, ubushyuhe bwinshi. Ibi bigabanya ibyago byo kwangirika bijyanye no kwambara, byemeza imikorere ihamye mugihe cyagutse.

Ibisobanuro

Izina ryibicuruzwa	SC-RSiC-Si
Ibikoresho	Silicon Impregnation Silicon Carbide Compact (isuku yo hejuru)
Porogaramu	Ibice byo kuvura ubushyuhe bwa Semiconductor, Ibikoresho byo gukora Semiconductor
Ifishi yo gutanga	Umubiri ubumbabumbwe (Umubiri wacumuye)

Ibigize			Umutungo wa mashini	Modulus yumusore (GPa)	Imbaraga Zunamye (MPa)
Ibigize (vol%)	α-SiC	α-SiC	RT	370	250
Ibigize (vol%)	82	18	800 ° C.	360	220
Ubucucike bwinshi (kg / m³)	3.02 x 10³		1200 ° C.	340	220
Ubushyuhe budashyuha ° C.	1350		Ikigereranyo cya Poisson	0.18 (RT)
Umutungo w'ubushyuhe	Amashanyarazi (W / (m · K))	Ubushobozi bwihariye bwo gushyushya (kJ / (kg · K))	Coefficient yo Kwagura Ubushyuhe (1 / K)
RT	220	0.7	RT ~ 700 ° C.	3.4 x 10^-6
700 ° C.	60	1.23	700 ~ 1200 ° C.	4.3 x10^-6

Ibirimo Umwanda ((ppm)

Ikintu

Igipimo cyibirimo

<0.5

<0.1

0.3

<0.1

<0.3

Porogaramu

▪Amashanyarazi ya Semiconductor:Ibyiza mubikorwa nko kubika imyuka ya chimique (CVD), gukura kwa epitaxial, hamwe na annealing, aho kugenzura neza ubushyuhe no kumara ibintu ari ngombwa.

▪Abatwara Wafer & Paddles:Yagenewe gufata neza no gutwara wafer mugihe cyo hejuru yubushyuhe bwo hejuru.

▪Ibidukikije bikabije: Bikwiranye nigenamiterere risaba kurwanya ubushyuhe, guhura n’imiti, hamwe no guhangayika.

Ibyiza bya Silicon-Yinjijwe na SiC

Ihuriro rya silicon karbide-isukuye cyane hamwe na tekinoroji ya silicon yateye imbere itanga inyungu zidasanzwe:

▪Icyitonderwa:Kuzamura ukuri no kugenzura gutunganya igice cya kabiri.

▪Igihagararo:Ihangane ibidukikije bikaze bitabangamiye imikorere.

▪Kuramba:Yongerera igihe cya serivisi ibikoresho byo gukora semiconductor.

▪Gukora neza:Itezimbere umusaruro wizeye ibisubizo byizewe kandi bihamye.

Kuberiki Hitamo Silicon Yashizwemo na SiC Ibisubizo?

At Semicera, tuzobereye mugutanga ibisubizo bihanitse bikwiranye nibikenerwa nabakora inganda. Silicon-Yinjijwe na Silicon Carbide Paddle na Wafer Carrier ikorerwa ibizamini bikomeye kandi byujuje ubuziranenge kugirango byuzuze amahame yinganda. Muguhitamo Semicera, urashobora kubona ibikoresho bigezweho bigamije kunoza imikorere yawe yo gukora no kuzamura ubushobozi bwawe bwo gukora.

Ibisobanuro bya tekiniki

▪Ibigize ibikoresho:Carbide nziza cyane ya silicon karbide hamwe na silicon yatewe.

▪Gukoresha Ubushyuhe:Kugera kuri 2700 ° C.

▪ Amashanyarazi:Ntibisanzwe hejuru yo gukwirakwiza ubushyuhe bumwe.

▪Ibyiza byo Kurwanya:Oxidation, ruswa, kandi irwanya kwambara.

▪Porogaramu:Bihujwe na sisitemu zitandukanye za semiconductor sisitemu yo gutunganya amashyuza.

Gutunganya CNN, gusukura imiti, gutwikira CVD

Twandikire

Witeguye kuzamura inzira yawe yo gukora semiconductor? TwandikireSemicerauyumunsi kugirango umenye byinshi kubyerekeranye na Silicon-Imregnated Silicon Carbide Paddle na Wafer Carrier.

▪Imeri: sales01@semi-cera.com/sales05@semi-cera.com

▪Terefone: + 86-0574-8650 3783

▪Aho uherereye:No.1958 Umuhanda wa Jiangnan, tekinoroji ya Ningbo, Zone, Intara ya Zhejiang, 315201, Ubushinwa

Mbere: Isostatike PECVD Ubwato bwa Graphite

Ibikurikira: Isuku ryinshi CVD Silicon Carbide ibikoresho bibisi