Silicon Nitride Ceramic Substrate

Ibisobanuro bigufi:

Semicera ya Silicon Nitride Ceramic Substrate itanga imbaraga zidasanzwe zumuriro nimbaraga zikomeye zo gusaba ibikoresho bya elegitoroniki. Byagenewe kwizerwa no gukora neza, izi substrate ninziza kubikoresho byimbaraga nyinshi kandi byihuta cyane. Izere Semicera kubikorwa byisumbuyeho mubuhanga bwa ceramic substrate.


Ibicuruzwa birambuye

Ibicuruzwa

Semicera ya Silicon Nitride Ceramic Substrate yerekana isonga ryubuhanga buhanitse bwibikoresho, bitanga ubushyuhe budasanzwe bwumuriro hamwe nubukanishi bukomeye. Yashizweho kubikorwa-byimikorere ihanitse, iyi substrate irenze mubidukikije bisaba gucunga neza ubushyuhe nubusugire bwimiterere.

Silicon Nitride Ceramic Substrates yagenewe guhangana nubushyuhe bukabije nikirere kibi, bigatuma biba byiza kubikoresho bya elegitoroniki bifite ingufu nyinshi kandi nyinshi. Ubushobozi bwabo bwo hejuru bwumuriro butuma ubushyuhe bukwirakwizwa neza, nibyingenzi mugukomeza imikorere no kuramba kwibikoresho bya elegitoroniki.

Semicera yiyemeje ubuziranenge igaragara muri buri Silicon Nitride Ceramic Substrate dukora. Buri substrate ikorwa hifashishijwe uburyo bugezweho bwo gukora kugirango harebwe imikorere ihamye nudusembwa duto. Uru rwego rwo hejuru rusobanutse rushyigikira ibyifuzo byinganda nkimodoka, icyogajuru, n’itumanaho.

Usibye inyungu zubushyuhe nubukanishi, insimburangingo zacu zitanga ibikoresho byiza byogukoresha amashanyarazi, bigira uruhare mubwizerwe bwibikoresho bya elegitoroniki. Mugabanye kwivanga kwamashanyarazi no kuzamura ibice bihamye, Silice ya Silicon Nitride Ceramic Substrates igira uruhare runini mugutezimbere imikorere yibikoresho.

Guhitamo Semicera ya Silicon Nitride Ceramic Substrate bisobanura gushora mubicuruzwa bitanga imikorere myiza kandi iramba. Substrates zacu zashizweho kugirango zihuze ibikenewe bya elegitoroniki igezweho, byemeza ko ibikoresho byawe byungukira mu buhanga bugezweho kandi bwizewe budasanzwe.

Ibintu

Umusaruro

Ubushakashatsi

Dummy

Ibipimo bya Crystal

Polytype

4H

Ikosa ryerekana icyerekezo

<11-20> 4 ± 0.15 °

Ibipimo by'amashanyarazi

Dopant

Ubwoko bwa Azote

Kurwanya

0.015-0.025ohm · cm

Ibipimo bya mashini

Diameter

150.0 ± 0.2mm

Umubyimba

350 ± 25 mm

Icyerekezo cyibanze

[1-100] ± 5 °

Uburebure bwibanze

47.5 ± 1.5mm

Igice cya kabiri

Nta na kimwe

TTV

≤5 mm

≤10 mm

≤15 mm

LTV

≤3 μm (5mm * 5mm)

≤5 μm (5mm * 5mm)

≤10 μ m (5mm * 5mm)

Umuheto

-15 mm ~ 15 mm

-35μm ~ 35μm

-45μm ~ 45μm

Intambara

≤35 mm

≤45 mm

≤55 mm

Imbere (Si-face) ubukana (AFM)

Ra≤0.2nm (5μm * 5μm)

Imiterere

Ubucucike bwa Micropipe

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Umwanda

≤5E10atoms / cm2

NA

BPD

≤1500 ea / cm2

0003000 ea / cm2

NA

TSD

≤500 ea / cm2

0001000 ea / cm2

NA

Ubwiza bw'imbere

Imbere

Si

Kurangiza

Si-face CMP

Ibice

≤60ea / wafer (ubunini≥0.3μm)

NA

Igishushanyo

≤5ea / mm. Uburebure bwuzuye ≤Ibipimo

Uburebure bwuzuye≤2 * Diameter

NA

Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza

Nta na kimwe

NA

Imipira yimpande / ibyerekana / kuvunika / isahani

Nta na kimwe

Agace ka polytype

Nta na kimwe

Agace kegeranye ≤20%

Agace kegeranye ≤30%

Ikimenyetso cya laser imbere

Nta na kimwe

Inyuma Yinyuma

Kurangiza

C-isura CMP

Igishushanyo

≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter

NA

Inenge zinyuma (chips / indents)

Nta na kimwe

Inyuma yinyuma

Ra≤0.2nm (5μm * 5μm)

Ikimenyetso cya laser inyuma

Mm 1 (uhereye hejuru)

Impande

Impande

Chamfer

Gupakira

Gupakira

Epi-yiteguye hamwe no gupakira vacuum

Gupakira cassette nyinshi

* Inyandiko : "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD.

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SiC wafers

  • Mbere:
  • Ibikurikira: