Semicera ya Silicon Nitride Ceramic Substrate yerekana isonga ryubuhanga buhanitse bwibikoresho, bitanga ubushyuhe budasanzwe bwumuriro hamwe nubukanishi bukomeye. Yashizweho kubikorwa-byimikorere ihanitse, iyi substrate irenze mubidukikije bisaba gucunga neza ubushyuhe nubusugire bwimiterere.
Silicon Nitride Ceramic Substrates yagenewe guhangana nubushyuhe bukabije nikirere kibi, bigatuma biba byiza kubikoresho bya elegitoroniki bifite ingufu nyinshi kandi nyinshi. Ubushobozi bwabo bwo hejuru bwumuriro butuma ubushyuhe bukwirakwizwa neza, nibyingenzi mugukomeza imikorere no kuramba kwibikoresho bya elegitoroniki.
Semicera yiyemeje ubuziranenge igaragara muri buri Silicon Nitride Ceramic Substrate dukora. Buri substrate ikorwa hifashishijwe uburyo bugezweho bwo gukora kugirango harebwe imikorere ihamye nudusembwa duto. Uru rwego rwo hejuru rusobanutse rushyigikira ibyifuzo byinganda nkimodoka, icyogajuru, n’itumanaho.
Usibye inyungu zubushyuhe nubukanishi, insimburangingo zacu zitanga ibikoresho byiza byogukoresha amashanyarazi, bigira uruhare mubwizerwe bwibikoresho bya elegitoroniki. Mugabanye kwivanga kwamashanyarazi no kuzamura ibice bihamye, Silice ya Silicon Nitride Ceramic Substrates igira uruhare runini mugutezimbere imikorere yibikoresho.
Guhitamo Semicera ya Silicon Nitride Ceramic Substrate bisobanura gushora mubicuruzwa bitanga imikorere myiza kandi iramba. Substrates zacu zashizweho kugirango zihuze ibikenewe bya elegitoroniki igezweho, byemeza ko ibikoresho byawe byungukira mu buhanga bugezweho kandi bwizewe budasanzwe.
Ibintu | Umusaruro | Ubushakashatsi | Dummy |
Ibipimo bya Crystal | |||
Polytype | 4H | ||
Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
Ibipimo by'amashanyarazi | |||
Dopant | Ubwoko bwa Azote | ||
Kurwanya | 0.015-0.025ohm · cm | ||
Ibipimo bya mashini | |||
Diameter | 150.0 ± 0.2mm | ||
Umubyimba | 350 ± 25 mm | ||
Icyerekezo cyibanze | [1-100] ± 5 ° | ||
Uburebure bwibanze | 47.5 ± 1.5mm | ||
Igice cya kabiri | Nta na kimwe | ||
TTV | ≤5 mm | ≤10 mm | ≤15 mm |
LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
Imiterere | |||
Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
Umwanda | ≤5E10atoms / cm2 | NA | |
BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
Ubwiza bw'imbere | |||
Imbere | Si | ||
Kurangiza | Si-face CMP | ||
Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
Ikimenyetso cya laser imbere | Nta na kimwe | ||
Inyuma Yinyuma | |||
Kurangiza | C-isura CMP | ||
Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
Inenge zinyuma (chips / indents) | Nta na kimwe | ||
Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
Impande | |||
Impande | Chamfer | ||
Gupakira | |||
Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
* Inyandiko : "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. |