Ibyiza
Kurwanya ubushyuhe bwinshi
Kurwanya ruswa nziza
Kurwanya Abrasion Nziza
Coefficient yo hejuru yubushyuhe
Kwiyitirira amavuta, ubucucike buke
Gukomera cyane
Igishushanyo cyihariye.
Porogaramu
-Imyenda idashobora kwambarwa: bushing, isahani, nozzle yumusenyi, umurongo wa cyclone, gusya ingunguru, nibindi ...
-Ubushuhe Burebure: SiC Slab, Kuzimya Furnace Tube, Imirasire ya Tube, irabagirana, Gushyushya Element, Roller, Beam, Guhindura Ubushyuhe, Umuyoboro ukonje, Umuyoboro ukonje, Gutwika Nozzle, Ubwubatsi bwa Thermocouple Tube, SiC ubwato, Imiterere yimodoka ya Kiln, Setter, nibindi.
-Silicon Carbide Semiconductor: SiC wafer ubwato, sic chuck, sic paddle, sic cassette, sic diffusion tube, wafer fork, plaque yo guswera, inzira, nibindi.
-Silicon Carbide Ikidodo Ikidodo: ubwoko bwose bwo gufunga impeta, gutwara, ibihuru, nibindi.
-Umurima wa Fotovoltaque: Padile ya Cantilever, Gusya Barrel, Silicon Carbide Roller, nibindi.
-Umurima wa Batiri ya Litiyumu
Ibintu bifatika bya SiC
| Umutungo | Agaciro | Uburyo |
| Ubucucike | 3.21 g / cc | Kurohama-kureremba hamwe nubunini |
| Ubushyuhe bwihariye | 0,66 J / g ° K. | Flash flash |
| Imbaraga zoroshye | 450 MPa 560 MPa | Ingingo 4 yunamye, RT4 igoramye, 1300 ° |
| Gukomera kuvunika | 2.94 MPa m1 / 2 | Microindentation |
| Gukomera | 2800 | Vicker, umutwaro wa 500g |
| Modulus Yumusore Modulus | 450 GPa430 GPa | 4 pt yunamye, RT4 yunamye, 1300 ° C. |
| Ingano y'ibinyampeke | 2 - 10 µm | SEM |
Ubushyuhe Bwiza bwa SiC
| Amashanyarazi | 250 W / m ° K. | Uburyo bwa Laser flash, RT |
| Kwagura Ubushyuhe (CTE) | 4.5 x 10-6 ° K. | Icyumba cyicyumba kugeza 950 ° C, dilatometero silika |
Ibipimo bya tekiniki
| Ingingo | Igice | Amakuru | ||||
| RBSiC (SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| Ibirimo | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Ibikoresho bya silicon kubuntu | % | 15 | 0 | 0 | 0 | 0 |
| Ubushyuhe bwa serivisi | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Ubucucike | g / cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Fungura ubwoba | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Imbaraga zunama 20 ℃ | Мпа | 250 | 160 | 380 | 100 | / |
| Imbaraga zunama 1200 ℃ | Мпа | 280 | 180 | 400 | 120 | / |
| Modulus ya elastique 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus ya elastique 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Amashanyarazi 1200 ℃ | W / mK | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient yo kwagura ubushyuhe | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg / mm2 | 2115 | / | 2800 | / | / |
CVD silicon karbide itwikiriye hejuru yinyuma yubutaka bwa silicon carbide ceramic yongeye gushiramo ibicuruzwa bishobora kugera ku cyenda kirenga 99,9999% kugirango abakiriya babone ibyo bakeneye mu nganda zikoresha amashanyarazi.
