Semicera ya 4 Inch N yo mu bwoko bwa SiC Substrates yakozwe kugirango ihuze ibipimo nyabyo byinganda ziciriritse. Izi nteruro zitanga imikorere-yimikorere murwego runini rwa elegitoronike, itanga imiyoboro idasanzwe hamwe nubushyuhe bwumuriro.
Ubwoko bwa N-doping yibi bikoresho bya SiC byongera amashanyarazi yabo, bigatuma bikenerwa cyane cyane nimbaraga nyinshi kandi zikoreshwa cyane. Uyu mutungo utuma imikorere ikora neza nka diode, transistor, na amplifier, aho kugabanya gutakaza ingufu ari ngombwa.
Semicera ikoresha uburyo bugezweho bwo gukora kugirango harebwe ko buri substrate yerekana ubuziranenge bwubuso hamwe nuburinganire. Ubu busobanuro nibyingenzi mubikorwa bya elegitoroniki, ibikoresho bya microwave, nubundi buryo bwikoranabuhanga busaba imikorere yizewe mubihe bikabije.
Kwinjiza Semicera ya N-ubwoko bwa SiC insimburangingo kumurongo wawe wo gukora bivuze kungukirwa nibikoresho bitanga ubushyuhe bukabije hamwe n’amashanyarazi. Izi substrate ninziza zo gukora ibice bisaba kuramba no gukora neza, nka sisitemu yo guhindura ingufu hamwe na amplifier ya RF.
Muguhitamo Semicera ya 4 Inch N yo mu bwoko bwa SiC Substrates, uba ushora imari mubicuruzwa bihuza siyanse yibikoresho bishya hamwe nubukorikori bwitondewe. Semicera ikomeje kuyobora inganda zitanga ibisubizo bishyigikira iterambere rya tekinoroji igezweho, itanga imikorere myiza kandi yizewe.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
