1.Ku bijyanyeSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers ikorwa mugushyira igipande kimwe cya kirisiti kuri wafer ukoresheje silicon karbide imwe ya kirisiti ya kirisiti nka substrate, ubusanzwe ikoresheje imyuka ya chimique (CVD). Muri byo, silicon carbide epitaxial itegurwa no gukura silicon carbide epitaxial layer kuri substrate ya silicon carbide substrate, hanyuma igahimbwa mubikoresho bikora neza.
2.Silicon Carbide Epitaxial WaferIbisobanuro
Turashobora gutanga santimetero 4, 6, 8 N-ubwoko bwa 4H-SiC epitaxial wafer. Epitaxial wafer ifite umuvuduko mwinshi, umuvuduko mwinshi wa electron yihuta, umuvuduko mwinshi gazi ya elegitoroniki ya elegitoronike, hamwe nimbaraga zo kumeneka cyane. Iyi miterere ituma igikoresho kirwanya ubushyuhe bwinshi, imbaraga za voltage nyinshi, umuvuduko wihuse, umuvuduko muke, ubunini buto nuburemere bworoshye.
3. SiC Epitaxial Porogaramu
SiC epitaxial waferikoreshwa cyane cyane muri Schottky diode (SBD), icyuma cya oxyde semiconductor yumurima wa transistor (MOSFET) ihuza imbaraga za transistor (JFET), transiporiste ya bipolar (BJT), thyristor (SCR), inzitizi ya bipolar transistor (IGBT), ikoreshwa mumashanyarazi make, hagati ya voltage na voltage nyinshi. Kugeza ubu,SiC epitaxial waferskubisabwa na voltage nyinshi biri mubushakashatsi niterambere ryisi yose.
