SemiceraKumenyekanisha850V Imbaraga Zinshi GaN-kuri-Si Epi Wafer, intambwe mu guhanga udushya. Iterambere rya epi wafer rihuza imikorere myiza ya Gallium Nitride (GaN) hamwe nigiciro-cyiza cya Silicon (Si), itanga igisubizo gikomeye kubisabwa na voltage nyinshi.
Ibintu by'ingenzi:
•Gukoresha Umuvuduko mwinshi: Yashizweho kugirango ashyigikire kugeza 850V, iyi GaN-kuri-Si Epi Wafer ninziza yo gusaba ibikoresho bya elegitoroniki, bigafasha gukora neza no gukora.
•Kongera imbaraga: Hamwe na elegitoronike igenda neza hamwe nubushyuhe bwumuriro, tekinoroji ya GaN itanga ibishushanyo mbonera kandi byongera ingufu.
•Igisubizo Cyiza: Mugukoresha silicon nka substrate, iyi epi wafer itanga ikiguzi cyiza kubisanzwe bya WaN waferi, bitabangamiye ubuziranenge cyangwa imikorere.
•Urwego runini rwo gusaba: Byuzuye kugirango ukoreshwe mumashanyarazi, ibyuma byongera imbaraga za RF, nibindi bikoresho bya elegitoroniki bifite ingufu nyinshi, byemeza kwizerwa no kuramba.
Shakisha ahazaza h'ikoranabuhanga rikoresha ingufu nyinshi hamwe na Semicera850V Imbaraga Zinshi GaN-kuri-Si Epi Wafer. Yashizweho kubikorwa bigezweho, iki gicuruzwa cyemeza ko ibikoresho bya elegitoroniki bikora neza kandi byizewe. Hitamo Semicera kubisekuruza byawe bizakurikiraho.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
