Kurwanya okiside, imikorere myiza SiC Bonded Si3N4 ikibaho

Kurwanya okiside, imikorere myiza SiC Bonded Si3N4 yamenetse Ikibaho cyerekanwe

Ibisobanuro bigufi:

Semicera Energy Technology Co., Ltd nisoko ritanga isoko ryinzobere mugukoresha wafer kandi igezweho. Twiyemeje gutanga ibicuruzwa byiza-byizewe, byizewe, kandi bishya mubikorwa bya semiconductor, inganda zifotora nizindi nzego zijyanye nayo.

Umurongo wibicuruzwa byacu birimo SiC / TaC wasize ibicuruzwa bya grafite nibicuruzwa bya ceramic, bikubiyemo ibikoresho bitandukanye nka karubide ya silicon, nitride ya silicon, na oxyde ya aluminium nibindi nibindi.

Nkumutanga wizewe, twumva akamaro k'ibikoreshwa mugikorwa cyo gukora, kandi twiyemeje gutanga ibicuruzwa byujuje ubuziranenge bwo hejuru kugirango ibyo abakiriya bacu bakeneye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Nitride ya Silicon ihujwe na silicon carbide itanura ifite ibiranga imbaraga zubushyuhe bwo hejuru, guhangana nubushyuhe bwiza bwumuriro, guhindagurika byoroshye, kurwanya okiside, kurwanya ruswa, gutwara neza nubushyuhe nibindi.

Ibipimo ngenderwaho byingenzi

Ingingo	Indangantego ya Firebrick	Itanura	Ironderero ryibicuruzwa byakozwe
Ikigaragara（%）	<16	<16	<14
Ubucucike bwinshi（g / cm3）	2 2.65	2 2.65	2 2.68
Imbaraga zo kwikuramo ubushyuhe bwicyumba（MPa）	2 160	2 170	2 180
Kunama imbaraga mubushyuhe bwicyumba（1400X：） MPa	2 40	2 45	2 45
Ubushyuhe bwo hejuru bwo kugonda imbaraga（1400r） MPa	2 50	2 50	2 50
Coefficient yo kwagura ubushyuhe（110CTC）xioVC	<4.18	<4.18	<4.18
Amashanyarazi（1100C）	216	2 16	216
Amashanyarazi（°C ）	1800	1800	1800
0.2 MPa Korohereza ubushyuhe munsi yumutwaro（X：）	1600	1600	> 1700
Ubushyuhe ntarengwa bwo gukora（°C）	1550	1550	1550

Ibicuruzwa bikoreshwa cyane mu gusya ceramic gusya, ibicuruzwa bya aluminiyumu, umupira wa aluminiyumu, itanura ry’inganda, ceramic ya elegitoronike, amashanyarazi y’amashanyarazi menshi, ibikoresho by’isuku, farufari ya buri munsi, nitride alloy na ceramics nizindi nganda.