Koresha ubushyuhe bwo hejuru bwangirika bwangirika SiC Bonded Si3N4 Amatafari

Koresha ubushyuhe bwo hejuru bwangirika SiC Bonded Si3N4 Amatafari yamashanyarazi Amashusho

Ibisobanuro bigufi:

WeiTai Energy Technology Co., Ltd. nisoko ritanga isoko ryinzobere mugukoresha wafer kandi igezweho.Twiyemeje gutanga ibicuruzwa byiza-byizewe, byizewe, kandi bishya mubikorwa bya semiconductor,inganda zifotorahamwe nizindi nzego zijyanye.

Umurongo wibicuruzwa byacu birimo SiC / TaC wasize ibicuruzwa bya grafite nibicuruzwa bya ceramic, bikubiyemo ibikoresho bitandukanye nka karubide ya silicon, nitride ya silicon, na oxyde ya aluminium nibindi nibindi.

Nkumutanga wizewe, twumva akamaro k'ibikoreshwa mugikorwa cyo gukora, kandi twiyemeje gutanga ibicuruzwa byujuje ubuziranenge bwo hejuru kugirango ibyo abakiriya bacu bakeneye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Nitride ya silicon ihujwe na silicon karbide itanura ifite ibiranga imbaraga zubushyuhe bwo hejuru, guhangana nubushyuhe bwiza bwumuriro, guhindura ibintu byoroshye, kurwanya okiside, kurwanya ruswa, gutwara neza nubushyuhe nibindi.

Ibipimo ngenderwaho byingenzi

Ingingo	Indangantego ya Firebrick	Itanura	Ironderero ryibicuruzwa byakozwe
Ikigaragara（%）	<16	<16	<14
Ubucucike bwinshi（g / cm3）	2 2.65	2 2.65	2 2.68
Imbaraga zo kwikuramo ubushyuhe bwicyumba（MPa）	2 160	2 170	2 180
Kunama imbaraga mubushyuhe bwicyumba（1400X：） MPa	2 40	2 45	2 45
Ubushyuhe bwo hejuru bugoramye（1400r） MPa	2 50	2 50	2 50
Coefficient yo kwagura ubushyuhe（110CTC）xioVC	<4.18	<4.18	<4.18
Amashanyarazi（1100C）	216	2 16	216
Amashanyarazi（°C ）	1800	1800	1800
0.2 MPa Korohereza ubushyuhe munsi yumutwaro（X：）	1600	1600	> 1700
Ubushyuhe ntarengwa bwo gukora（°C）	1550	1550	1550

Ibicuruzwa bikoreshwa cyane mu gusya ceramic gusya, ibicuruzwa bya aluminiyumu, umupira wa aluminiyumu, itanura ry’inganda, ceramic ya elegitoronike, amashanyarazi y’amashanyarazi menshi, ibikoresho by’isuku, farufari ya buri munsi, nitride alloy na ceramics nizindi nganda.

Kurwanya kwambara ibikoresho bya Si3N4-SiC bikubye inshuro 3,13 ibyuma bidashobora kwambara (Crl5Mo3), kandi uburemere ni 1/3 gusa cyibyuma bidashobora kwambara (Crl5Mo3).

Indangagaciro zo kurwanya ruswa zigabanya agaciro ka Si3N4-SiC na calcium karbide na alumina mubisubizo bitandukanye nibi bikurikira:

Igisubizo	Ubushyuhe （"C）	Si3N4-SiC	Ububiko rusange	Carbide ya aluminium	Aluminium oxyde
98%Acide ya sulfure	100	1.8	55.0	> 1000	65,0
50%Hydroxide ya Sodium	100	2,5	> 1000	5.0	75.0
53%Acide Hydrofluoric	25	<0.2	7.9	8.0	20,0
85%Acide ya fosifori	100	<0.2	8.8	55.0	> 1000
70%Acide Nitric	100	<0.2	0.5	> 1000	7,0
45%Hydroxide ya Potasiyumu	100	<0.2	> 1000	3.0	60,0
25%Acide Hydrochloric	70	<0.2	0.9	85.0	72,0
10% Hydrofluoric aside + 57% aside aside	25	<0.2	> 1000	> 1000	16,0