Impeta ya CVD SiC yo muri Semicera, igisubizo cyambere cyagenewe uburyo bwo gukora igice cya kabiri cyogukora. Impeta zacu zo gutobora zakozwe mubuhanga kugirango zongere imikorere yimitwe ya CVD SiC, itanga ibisubizo byiza mugihe cyo gukwirakwiza. Hamwe nubwubatsi bwabo bukomeye hamwe nubuhanga bwuzuye, izi mpeta zitanga ubwizerwe nubushobozi bukenewe kubikoresho byujuje ubuziranenge byumye.
Muri Semicera, twumva uruhare rukomeye karbide ya silicon igira muri tekinoroji ya semiconductor. Impeta zacu za CVD SiC zabugenewe kugirango zihuze inzira zitandukanye, zirimo MOCVD nubundi buryo bwo gutobora. Ibice bikomeye bya SiC byemeza neza ubushyuhe bwumuriro hamwe nubushakashatsi bwimiti, bigatuma impeta yacu ya etching ihitamo neza kubidukikije bisabwa cyane.
Ibyo twiyemeje guhanga udushya nubuziranenge byemeza ko buri mpeta ya CVD SiC yujuje ubuziranenge bwinganda. Hitamo Semicera kubisubizo byawe byuburambe kandi ubone uburambe butagereranywa nibikorwa biramba bijyanye nibyo ukeneye bidasanzwe. Hamwe n'ubuhanga bwacu muri SiC duswera hamwe na tekinoroji ya etching, turi hano kugirango dushyigikire intsinzi yawe murwego rwa semiconductor.
Mu gice cya semiconductor, guhagarara kwa buri kintu ni ngombwa cyane kubikorwa byose. Nyamara, ahantu hafite ubushyuhe bwo hejuru, grafite irahinduka okiside kandi igatakara, kandi igicapo cya SiC gishobora gutanga uburinzi buhamye kubice bya grafite. MuriSemiceraitsinda, dufite ibikoresho byacu byo gutunganya ibishushanyo mbonera, bishobora kugenzura ubuziranenge bwa grafite munsi ya 5ppm. Isuku ya karibide ya silicon nayo iri munsi ya 5ppm.
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