Semicera Semiconductor itanga leta-yubukorikoriKirisiti ya SiCgukura ukoresheje neza cyaneUburyo bwa PVT. MugukoreshaCVD-SiCguhagarika kuvugurura nkisoko ya SiC, twageze ku ntera idasanzwe yo gukura kwa mm 1,46 mm h - 1, twemeza ko ubuziranenge bwo hejuru bwa kirisiti hamwe na microtubule nkeya hamwe nubucucike bwa dislocation. Ubu buryo bushya butanga imikorere-yo hejuruKirisiti ya SiCbikwiranye no gusaba porogaramu mumashanyarazi yinganda.
SiC Crystal Parameter (Ibisobanuro)
- Uburyo bwo gukura: Gutwara imyuka yumubiri (PVT)
- Iterambere ryubwiyongere: 1,46 mm h - 1
- Ubwiza bwa Crystal: Hejuru, hamwe na microtubule nkeya hamwe nubucucike bwa dislocation
- Ibikoresho: SiC (Carbide ya Silicon)
- Porogaramu: Umuvuduko mwinshi, imbaraga nyinshi, porogaramu nyinshi
SiC Crystal Ikiranga na Porogaramu
Semicera Semiconductor's Kirisiti ya SiCni byiza kuriPorogaramu-yimikorere ihanitse. Umugozi mugari wa semiconductor ibikoresho birahagije kuri voltage nyinshi, imbaraga nyinshi, hamwe na progaramu nyinshi. Ibirahure byacu byashizweho kugirango byuzuze ubuziranenge bukomeye, byemeza kwizerwa no gukora neza muriimbaraga za semiconductor porogaramu.
SiC Crystal Ibisobanuro
Gukoresha kumenaguraCVD-SiCnkibikoresho nkomoko, ibyacuKirisiti ya SiCkwerekana ubuziranenge ugereranije nuburyo busanzwe. Inzira ya PVT yateye imbere igabanya inenge nka karuboni kandi ikomeza urwego rwo hejuru, bigatuma kristu zacu zikwiranye cyaneigice cya kabiribisaba ubusobanuro bukabije.