GaAs Wafers | GaAs Epi Wafers |Galllium Arsenide Substrates

Ibisobanuro bigufi:

WeiTai Energy Technology Co., Ltd. nisoko ritanga isoko ryinzobere mugukoresha wafer kandi igezweho.Twiyemeje gutanga ibicuruzwa byiza-byizewe, byizewe, kandi bishya mubikorwa byo gukora igice cya kabiri, inganda zifotora nizindi nzego zijyanye nayo.

Umurongo wibicuruzwa byacu birimo SiC / TaC wasize ibicuruzwa bya grafite nibicuruzwa bya ceramic, bikubiyemo ibikoresho bitandukanye nka karubide ya silicon, nitride ya silicon, na oxyde ya aluminium nibindi nibindi.

Kugeza ubu, nitwe twenyine dukora uruganda rutanga isuku 99,9999% ya SiC hamwe na 99.9% byongeye gushyirwaho karbide ya silicon.Uburebure bwa SiC ntarengwa dushobora gukora 2640mm.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibikoresho bya GaAs bigabanyijemo ibice byayobora kandi bikoresha igice kimwe, bikoreshwa cyane muri lazeri (LD), diode ya semiconductor itanga urumuri (LED), hafi ya lazeri hafi ya infragre, kwantumiza neza na lazeri ifite ingufu nyinshi.Chip ya HEMT na HBT ya radar, microwave, milimetero yumuraba cyangwa mudasobwa yihuta cyane na mudasobwa itumanaho;Ibikoresho bya radiyo yumurongo wa terefone, 4G, 5G, itumanaho rya satelite, WLAN.

Vuba aha, insimburangingo ya gallium arsenide nayo imaze gutera imbere cyane muri mini-LED, Micro-LED, na LED itukura, kandi ikoreshwa cyane mubikoresho byambara AR / VR.

Diameter 晶片直径	50mm \|75mm \|100mm \|150mm
Uburyo bwo Gukura 生长方式	LEC液封直拉法 VGF垂直梯度凝固法
Umubyimba wa Wafer 厚度	350 um ~ 625 um
Icyerekezo 晶向	<100> / <111> / <110> cyangwa abandi
Ubwoko bw'imyitwarire 导电类型	P - andika / N - ubwoko / Semi-izingira
Ubwoko / Dopant 掺杂剂	Zn / Si / idafunguye
Kwitonda 载流子浓度	1E17 ~ 5E19 cm-3
Kurwanya RT 室温电阻率(ohm • cm)	≥1E7 kuri SI
Kugenda 迁移率(cm2 / V • Sec)	0004000
EPD (Ubucucike bwa Etch) 腐蚀坑密度	100 ~ 1E5
TTV 总厚度变化	Um 10 um
Umuheto / Intambara 翘曲度	Um 20 um
Kurangiza 表面	DSP / SSP
Ikimenyetso 激光码
Icyiciro 等级	Epi isize amanota / urwego rwumukanishi