Silicon Carbide Substrates | SiC Wafers

Ibisobanuro bigufi:

WeiTai Energy Technology Co., Ltd. nisoko ritanga isoko ryinzobere mugukoresha wafer kandi igezweho.Twiyemeje gutanga ibicuruzwa byiza-byizewe, byizewe, kandi bishya mubikorwa byo gukora igice cya kabiri, inganda zifotora nizindi nzego zijyanye nayo.

Umurongo wibicuruzwa byacu birimo SiC / TaC wasize ibicuruzwa bya grafite nibicuruzwa bya ceramic, bikubiyemo ibikoresho bitandukanye nka karubide ya silicon, nitride ya silicon, na oxyde ya aluminium nibindi nibindi.

Kugeza ubu, nitwe twenyine dukora uruganda rutanga isuku 99,9999% ya SiC hamwe na 99.9% byongeye gushyirwaho karbide ya silicon.Uburebure bwa SiC ntarengwa dushobora gukora 2640mm.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Carbide ya Silicon (SiC) ibikoresho bya kirisiti imwe ifite ubugari bunini bwa bande (~ Si inshuro 3), ubushyuhe bwinshi bwo hejuru (~ Si inshuro 3.3 cyangwa GaAs inshuro 10), umuvuduko mwinshi wimuka wa electron (~ Si inshuro 2,5), amashanyarazi menshi yameneka umurima (~ Si inshuro 10 cyangwa GaAs inshuro 5) nibindi biranga ibintu byiza.

Ibikoresho bya SiC bifite ibyiza bidasubirwaho mubijyanye nubushyuhe bwo hejuru, umuvuduko mwinshi, inshuro nyinshi, ibikoresho bya elegitoroniki bikoresha ingufu hamwe nibidukikije bikabije nko mu kirere, mu gisirikare, ingufu za kirimbuzi, nibindi, byuzuza inenge yibikoresho gakondo bya semiconductor mubikorwa bifatika Porogaramu, kandi bigenda bihinduka inzira nyamukuru yingufu za semiconductor.

4H-SiC Silicon karbide substrate ibisobanuro

Ingingo 项目	Ibisobanuro 参数
Polytype 晶型	4H -SiC	6H- SiC
Diameter 晶圆直径	2 cm \|3 cm \|4 cm \|6inch	2 cm \|3 cm \|4 cm \|6inch
Umubyimba 厚度	330 mm ~ 350 mm	330 mm ~ 350 mm
Imyitwarire 导电类型	N - andika / Igice cya kabiri N型导电片/ 半绝缘片	N - andika / Igice cya kabiri N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Azote) V (Vanadium)	N2 (Azote) V (Vanadium)
Icyerekezo 晶向	Ku murongo <0001> Kureka umurongo <0001> kuri 4 °	Ku murongo <0001> Kureka umurongo <0001> kuri 4 °
Kurwanya 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Ubucucike bwa Micropipe (MPD) 微管密度	≤10 / cm2 ~ ≤1 / cm2	≤10 / cm2 ~ ≤1 / cm2
TTV 总厚度变化	≤ 15 mm	≤ 15 mm
Umuheto / Intambara 翘曲度	≤25 mm	≤25 mm
Ubuso 表面处理	DSP / SSP	DSP / SSP
Icyiciro 产品等级	Umusaruro / Icyiciro cy'ubushakashatsi	Umusaruro / Icyiciro cy'ubushakashatsi
Urukurikirane rwa Crystal 堆积方式	ABCB	ABCABC
Ikirangantego 晶格参数	a = 3.076A, c = 10.053A	a = 3.073A, c = 15.117A
Eg / eV (Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε (Umuyoboro uhoraho) 介电常数	9.6	9.66
Ironderero 折射率	n0 = 2.719 ne = 2.777	n0 = 2.707, ne = 2.755

6H-SiC Silicon Carbide substrate ibisobanuro

Ingingo 项目	Ibisobanuro 参数
Polytype 晶型	6H-SiC
Diameter 晶圆直径	4 cm \|6inch
Umubyimba 厚度	350μm ~ 450μm
Imyitwarire 导电类型	N - andika / Igice cya kabiri N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Azote) V (Vanadium)
Icyerekezo 晶向	<0001> kuri 4 ° ± 0.5 °
Kurwanya 电阻率	0.02 ~ 0.1 ohm-cm (6H-N Ubwoko)
Ubucucike bwa Micropipe (MPD) 微管密度	≤ 10 / cm2
TTV 总厚度变化	≤ 15 mm
Umuheto / Intambara 翘曲度	≤25 mm
Ubuso 表面处理	Si Isura: CMP, Epi-Yiteguye C Isura: Igipolonye cyiza
Icyiciro 产品等级	Icyiciro cy'ubushakashatsi