Semicera yerekana umuco wo mu rwego rwo hejurusilicon carbide cantilever paddlesyakozwe kugirango azamure inzira ya semiconductor. UdushyaSiCIgishushanyo cyerekana uburebure budasanzwe hamwe nubushyuhe bwo hejuru bwumuriro, bigatuma biba ikintu cyingenzi mugutunganya wafer mugihe cyubushyuhe bwo hejuru.
UwitekaSilicon carbide paddleyubatswe kugirango ihangane nubushyuhe bukabije bwumuriro mugihe ikomeza uburinganire bwimiterere, itanga ubwikorezi bwa wafer bwizewe mugice cyingenzi cyumusaruro wa semiconductor. Nimbaraga zisumba izindi mashini, iyiubwato bwa waferkugabanya ibyago byo kwangirika kwa wafer, biganisha ku musaruro mwinshi hamwe nubwiza buhoraho.
Kimwe mubintu byingenzi bishya muri Semicera ya SiC paddle iri muburyo bwihariye bwo gushushanya. Yateguwe kugirango ihuze umusaruro ukenewe, paddle itanga ihinduka muguhuza ibikoresho bitandukanye byashizweho, bigatuma iba igisubizo cyiza kubikorwa byo guhimba bigezweho. Ubwubatsi bworoshye ariko bukomeye butuma gukora byoroshye kandi bikagabanya igihe cyo gukora, bikagira uruhare mukuzamura imikorere mumashanyarazi.
Usibye imiterere yubushyuhe nubukanishi ,.Silicon carbide paddleitanga imiti irwanya imiti, ikayemerera gukora neza ndetse no mubidukikije bikaze. Ibi bituma bikoreshwa cyane muburyo bukoreshwa muburyo bwo gutobora, kubitsa, no kuvura ubushyuhe bwo hejuru, aho gukomeza ubusugire bwubwato bwa wafer ari ngombwa kugirango habeho umusaruro mwiza.
| Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho | |
| Umutungo | Agaciro gasanzwe |
| Ubushyuhe bwo gukora (° C) | 1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije) |
| Ibirimo | > 99,96% |
| Ibirimo Si kubuntu | <0.1% |
| Ubucucike bwinshi | 2.60-2.70 g / cm3 |
| Ikigaragara | <16% |
| Imbaraga zo kwikuramo | > 600 MPa |
| Imbaraga zikonje | 80-90 MPa (20 ° C) |
| Imbaraga zunamye | 90-100 MPa (1400 ° C) |
| Kwiyongera k'ubushyuhe @ 1500 ° C. | 4.70 10-6/ ° C. |
| Ubushyuhe bwumuriro @ 1200 ° C. | 23 W / m • K. |
| Modulus | 240 GPa |
| Kurwanya ubushyuhe | Nibyiza cyane |
