Ubuzima Burebure Ubuzima SiC Yashushanyije Graphite Itwara Solar Wafer

Ubuzima Burebure Burebure SiC Yashushanyije Graphite Itwara Solar Wafer Yerekanwe

Ibisobanuro bigufi:

Carbide ya silicon nubwoko bushya bwibumba hamwe nibikorwa bihenze kandi nibintu byiza cyane. Bitewe nibintu nkimbaraga nyinshi nubukomezi, kurwanya ubushyuhe bwinshi, ubukana bwumuriro mwinshi hamwe no kurwanya ruswa, Silicon Carbide irashobora kwihanganira imiti yose yimiti. Niyo mpamvu, SiC ikoreshwa cyane mu bucukuzi bwa peteroli, imiti, imashini n’ikirere, ndetse n’ingufu za kirimbuzi ndetse n’abasirikare bafite ibyo basaba bidasanzwe kuri SIC. Porogaramu zimwe zishobora gutanga ni impeta ya kashe ya pompe, valve nintwaro zo gukingira nibindi.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza

Kurwanya ubushyuhe bwinshi
Kurwanya ruswa nziza
Kurwanya Abrasion Nziza
Coefficient yo hejuru yubushyuhe
Kwiyitirira amavuta, ubucucike buke
Gukomera cyane
Igishushanyo cyihariye.

Porogaramu

-Imyenda idashobora kwambarwa: bushing, isahani, nozzle yumusenyi, umurongo wa cyclone, gusya ingunguru, nibindi ...
-Ubushuhe Burebure: SiC Slab, Kuzimya Furnace Tube, Imirasire ya Tube, irabagirana, Gushyushya Element, Roller, Beam, Guhindura Ubushyuhe, Umuyoboro ukonje, Umuyoboro ukonje, Gutwika Nozzle, Ubwubatsi bwa Thermocouple Tube, SiC ubwato, Imiterere yimodoka ya Kiln, Setter, nibindi.
-Silicon Carbide Semiconductor: SiC wafer ubwato, sic chuck, sic paddle, sic cassette, sic diffusion tube, wafer fork, plaque yo guswera, inzira, nibindi.
-Silicon Carbide Ikidodo Ikidodo: ubwoko bwose bwo gufunga impeta, gutwara, ibihuru, nibindi.
-Umurima wa Fotovoltaque: Padile ya Cantilever, Gusya Barrel, Silicon Carbide Roller, nibindi.
-Umurima wa Batiri ya Litiyumu

WAFER (1)

WAFER (2)

Ibintu bifatika bya SiC

Umutungo	Agaciro	Uburyo
Ubucucike	3.21 g / cc	Kurohama-kureremba hamwe nubunini
Ubushyuhe bwihariye	0,66 J / g ° K.	Flash flash
Imbaraga zoroshye	450 MPa 560 MPa	Ingingo 4 yunamye, RT4 igoramye, 1300 °
Gukomera kuvunika	2.94 MPa m1 / 2	Microindentation
Gukomera	2800	Vicker, umutwaro wa 500g
Modulus Yumusore Modulus	450 GPa430 GPa	4 pt yunamye, RT4 yunamye, 1300 ° C.
Ingano y'ibinyampeke	2 - 10 µm	SEM

Ubushuhe Bwiza bwa SiC

Amashanyarazi	250 W / m ° K.	Uburyo bwa Laser flash, RT
Kwagura Ubushyuhe (CTE)	4.5 x 10-6 ° K.	Icyumba cyicyumba kugeza 950 ° C, dilatometero silika

Ibipimo bya tekiniki

Ingingo	Igice	Amakuru
Ingingo	Igice	RBSiC (SiSiC)	NBSiC	SSiC	RSiC	OSiC
Ibirimo	%	85	75	99	99.9	≥99
Ibikoresho bya silicon kubuntu	%	15	0	0	0	0
Ubushyuhe bwa serivisi	℃	1380	1450	1650	1620	1400
Ubucucike	g / cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Fungura ubwoba	%	0	13-15	0	15-18	7-8
Imbaraga zunama 20 ℃	Мпа	250	160	380	100	/
Imbaraga zunama 1200 ℃	Мпа	280	180	400	120	/
Modulus ya elastique 20 ℃	Gpa	330	580	420	240	/
Modulus ya elastique 1200 ℃	Gpa	300	/	/	200	/
Amashanyarazi 1200 ℃	W / mK	45	19.6	100-120	36.6	/
Coefficient yo kwagura ubushyuhe	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg / m^m2	2115	/	2800	/	/

CVD silicon karbide itwikiriye hejuru yinyuma yubutaka bwa silicon carbide ceramic yongeye gushiramo ibicuruzwa bishobora kugera ku cyenda kirenga 99,9999% kugirango abakiriya babone ibyo bakeneye mu nganda zikoresha amashanyarazi.