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Porogaramu ya MOCVD: Ubuyobozi Bwuzuye bwo Kuzamura Amashanyarazi Ya Semiconductor

Tunejejwe no kumenyekanisha ibyiyongereye kumurongo wibicuruzwa byacu, Porogaramu ya MOCVD, yazanwe na WeiTai Energy Technology Co., Ltd., uruganda rukomeye, rutanga ibicuruzwa, n’uruganda rukorera mu Bushinwa.MOCVD (Metal-Organic Chemical Vapor Deposition) ni ikoranabuhanga rigezweho rigira uruhare runini mu gukora ibicuruzwa byujuje ubuziranenge hamwe n’ibikoresho bya optoelectronic.Mugihe icyifuzo cya elegitoroniki yateye imbere gikomeje kwiyongera, Porogaramu zacu za MOCVD zitanga igisubizo kigezweho kugirango gikemuke ibikenewe ku isoko.Muri WeiTai Energy Technology Co., Ltd., twishimiye kuba twatanze imikorere idasanzwe kandi yizewe mubicuruzwa byose dutanga.Porogaramu zacu za MOCVD ntizihari, kuko zateguwe neza kandi zakozwe kugirango zitange ibisubizo byiza kubakiriya bacu baha agaciro.Hamwe n'uburambe n'ubunararibonye dufite muri urwo rwego, twigaragaje nk'umufatanyabikorwa wizewe mu nganda nyinshi, harimo ibikoresho bya elegitoroniki, itumanaho, n'ingufu zishobora kubaho.Duharanira guhora dushyashya no kunoza ibicuruzwa byacu kugirango tumenye ko byujuje ubuziranenge bwinganda.Hitamo WeiTai Energy Technology Co., Ltd. nkumushinga wawe wizewe wa MOCVD, kandi ubone ubuziranenge budasanzwe, ibiciro byapiganwa, hamwe na serivise nziza zabakiriya.Twandikire uyu munsi kugirango umenye byinshi byukuntu Porogaramu zacu MOCVD zishobora guhura nibyo ukeneye.

Ibicuruzwa bifitanye isano

Ubuzima burebure SIC Coated Graphite Heater ya MOCVD K465i, Ubushyuhe bwa Graphite kuri epitaxy

Ubuzima burebure SIC Coated Graphite Heater ya MOCVD K465i, Ubushyuhe bwa Graphite kuri epitaxy

Soma Ibikurikira
Igishushanyo cya Graphite (1) (1)

Ubushyuhe bwo hejuru MOCVD Substrate Heater

Disiki ya MOCVD

Kurwanya anti-okiside isukuye cyane SiC yatwikiriye tray ya MOCVD

Amashanyarazi yihariye ya Graphite ashyushya itanura rya Vacuum (2)

Carbide nziza cyane ya silicon yatwikiriwe Ibikoresho byo gushyushya MOCVD

MOCVD-Substrate-Gushyushya-Gushyushya-Ibintu-Kuri-MOCVD1

Semiconductor MOCVD substrate ashyushya, ibintu byo gushyushya MOCVD

Igishushanyo mbonera

Ibice 19 bya santimetero 2 shusho ya base ya MOCVD ibice

Silicon karbide ya disiki (1)

Silicon Carbide Disiki ya MOCVD

b2 ~ 1

Ibicuruzwa byo hejuru

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  • Elaine2023.05.18 14:29:22

    Twishimiye rwose kubona uruganda nkurwo rwemeza ubuziranenge bwibicuruzwa icyarimwe igiciro gihenze cyane.

  • David Eagleson2023.04.12 17:26:00

    Umuntu ugurisha ni umunyamwuga kandi ufite inshingano, ususurutse kandi ufite ikinyabupfura, twagize ikiganiro gishimishije kandi nta mbogamizi zururimi zitumanaho.

  • Denise2023.04.03 04:59:38

    Ntibyoroshye kubona ababigize umwuga kandi bafite inshingano mugihe cyubu.Twizere ko dushobora gukomeza ubufatanye burambye.

  • Antonia2023.03.31 18:51:39

    Iyi sosiyete irashobora kuba nziza kugirango ihuze ibyo dukeneye kubwinshi bwibicuruzwa nigihe cyo gutanga, bityo duhora tubihitamo mugihe dufite ibisabwa byamasoko.

  • Mona2023.02.20 10:19:13

    Uburyo bwo gucunga umusaruro bwarangiye, ubuziranenge buremewe, kwizerwa cyane na serivisi reka ubufatanye bworoshye, butunganye!

  • Freda2023.01.11 19:03:20

    Umuyobozi w'ikigo afite uburambe bukomeye bwo kuyobora no kwitwara neza, abakozi bagurisha barashyuha kandi bishimye, abakozi ba tekinike ni abahanga kandi bafite inshingano, ntabwo rero duhangayikishijwe nibicuruzwa, uruganda rwiza.

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