Ibisobanuro
Semiconductor SiC yatwikiriye disiki ya monocrystalline silicon epitaxial kuva muri semicera, igisubizo cyambere cyagenewe iterambere ryiterambere rya epitaxial. Semicera kabuhariwe mu gukora disiki ikora cyane itanga ubushyuhe bwiza bwumuriro nigihe kirekire, nibyiza kubisabwa muriSi EpitaxynaSiC Epitaxy. Iyi disiki ya epitaxial, yometse kuri silicon karbide (SiC), yongerera imikorere nubusobanuro bwibikorwa bya semiconductor.
IwacuMOCVDdisiki ihuza epitaxial itanga imikorere ihamye muburyo butandukanye, harimo sisitemu isaba PSS Etching Carrier,ICPUmwikorezi, na RTP. Iyi disiki yakozwe kugirango ihuze ibyifuzo byinshi byumusaruro wa Monocrystalline Silicon, bigatuma ibera LED Epitaxial Susceptor ikoreshwa nibindi bikorwa byo gukura kwa semiconductor. Igishushanyo cya Barrel Susceptor na Pancake Susceptor gishushanya gitanga ibintu byinshi kubabikora, mugihe ikoreshwa rya Photovoltaic Parts ryagura ikoreshwa ryinganda zizuba.
Nubwubatsi bukomeye, GaN kuri SiC Epitaxy ubushobozi bwiyi disiki irusheho kuzamura agaciro kayo sisitemu igezweho. Iki gisubizo cyashizweho kugirango gitange ibisubizo byizewe, byujuje ubuziranenge, bituma biba igice cyingenzi cyogukora igice cya kijyambere hamwe nogukora amafoto.
Ibyingenzi
1 .Ubuziranenge bwera SiC yashushanyije grafite
2. Kurwanya ubushyuhe burenze & uburinganire bwumuriro
3. NibyizaSiC ya kirisitiKuri Ubuso
4. Kuramba cyane kurwanya isuku yimiti
Ibyingenzi byingenzi bya CVD-SIC Coatings:
SiC-CVD | ||
Ubucucike | (g / cc) | 3.21 |
Imbaraga zoroshye | (Mpa) | 470 |
Kwiyongera k'ubushyuhe | (10-6 / K) | 4 |
Amashanyarazi | (W / mK) | 300 |
Gupakira no kohereza
Ubushobozi bwo gutanga:
10000 Igice / Ibice buri kwezi
Gupakira & Gutanga:
Gupakira: Bisanzwe & Gupakira bikomeye
Umufuka wuzuye + Agasanduku + Ikarito + Pallet
Icyambu:
Ningbo / Shenzhen / Shanghai
Igihe cyo kuyobora:
Umubare (Ibice) | 1-1000 | > 1000 |
Est. Igihe (iminsi) | 30 | Kuganira |