SiC Yashushanyijeho Graphite Base Susceptors ya MOCVD

SiC Yashushanyijeho Graphite Base Susceptorskuri MOCVD kuva muri semicera yashizweho kugirango itange imikorere idasanzwe mubikorwa byo gukura epitaxial. Carbide yo mu rwego rwohejuru ya carbide itwikiriye igishushanyo mbonera cyerekana ituze, iramba, hamwe nubushyuhe bwiza bwumuriro mugihe cya MOCVD (Metal Organic Chemical Vapor Deposition). Ukoresheje semicera yubuhanga bushya bwa susceptor, urashobora kugera kubintu byuzuye kandi neza muriSi EpitaxynaSiC EpitaxyPorogaramu.

IbiMOCVDbyashizweho kugirango bishyigikire urwego rwingenzi rwa semiconductor, nkaPSS Gutwara, Ikarita ya ICP, naRTP, kubikora bihindagurika kubikorwa bitandukanye byo guterana no gukora epitaxial. Ubwitange bwa Semicera kurwego rwo hejuru butuma aba suseptors bujuje ibyifuzo byumusaruro wa kijyambere.

Icyiza cyo gukoresha muriLED EpitaxialSusceptor, Barrel Susceptor, na Monocrystalline Silicon itunganya, aba suseptors barashobora gutegekwa kubunini bwa wafer butandukanye, harimo na Pancake Susceptor iboneza. Zifite kandi akamaro kanini mugukoresha ibice bya Photovoltaque, bikagira uruhare rukomeye mugutezimbere imirasire y'izuba ikora neza.

Mubyongeyeho, SiC Coated Graphite Base Susceptors ya MOCVD itezimbere kuri GaN kuri SiC Epitaxy, itanga ubwuzuzanye bukomeye hamwe nibikoresho bigezweho bya semiconductor. Waba wibanze ku kuzamura umusaruro cyangwa kuzamura ubwiza bwikura rya epitaxial, suseptors ya semicera itanga ubwizerwe nibikorwa bikenewe kugirango umuntu atsinde inganda zikoranabuhanga.