Ibisobanuro
Ipfunyika ya CVD-SiC ifite ibiranga imiterere imwe, ibikoresho byegeranye, birwanya ubushyuhe bwinshi, irwanya okiside, isuku nyinshi, aside & alkali irwanya na reagent organic, ifite imiterere ihamye yumubiri na chimique.
Ugereranije nibikoresho bya grafite bifite isuku nyinshi, grafite itangira okiside kuri 400C, bizatera igihombo cyifu bitewe na okiside, bikaviramo kwanduza ibidukikije kubikoresho bya periferi hamwe nicyumba cya vacuum, kandi byongera umwanda wibidukikije bifite isuku nyinshi.
Nyamara, igifuniko cya SiC kirashobora kugumya gutuza kumubiri na chimique kuri dogere 1600, Irakoreshwa cyane mubikorwa bigezweho, cyane cyane munganda ziciriritse.
Isosiyete yacu itanga serivise zo gutunganya SiC hakoreshejwe uburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, gukora urwego rwo kurinda SIC. SIC yashizweho ihujwe cyane na base ya grafite, itanga igishushanyo cyihariye cya grafite, bityo bigatuma ubuso bwa grafite bwuzuzanya, Ubusa butagira ubukana, ubushyuhe bwo hejuru, kurwanya ruswa no kurwanya okiside.
Gusaba
Ibyingenzi
1 .Ubuziranenge bwera SiC yashushanyije grafite
2. Kurwanya ubushyuhe burenze & uburinganire bwumuriro
3. Kirisiti nziza ya SiC yatwikiriye ubuso bunoze
4. Kuramba cyane kurwanya isuku yimiti
Ibyingenzi byingenzi bya CVD-SIC
SiC-CVD | ||
Ubucucike | (g / cc) | 3.21 |
Imbaraga zoroshye | (Mpa) | 470 |
Kwiyongera k'ubushyuhe | (10-6 / K) | 4 |
Amashanyarazi | (W / mK) | 300 |
Gupakira no kohereza
Ubushobozi bwo gutanga:
10000 Igice / Ibice buri kwezi
Gupakira & Gutanga:
Gupakira: Bisanzwe & Gupakira bikomeye
Umufuka wuzuye + Agasanduku + Ikarito + Pallet
Icyambu:
Ningbo / Shenzhen / Shanghai
Igihe cyo kuyobora:
Umubare (Ibice) | 1 - 1000 | > 1000 |
Est. Igihe (iminsi) | 15 | Kuganira |