SiC-Yashizwemo Epitaxial Reactor Barrel

Ibisobanuro bigufi:

Semicera itanga urwego rwuzuye rwa suseptors hamwe na grafite igizwe na reaction ya epitaxy itandukanye.

Binyuze mu bufatanye bufatika na OEM iyobora inganda, ubumenyi bwibikoresho byinshi, hamwe nubushobozi buhanitse bwo gukora, Semicera itanga ibishushanyo mbonera byujuje ibisabwa byihariye byo gusaba.Ibyo twiyemeje kuba indashyikirwa byemeza ko wakiriye ibisubizo byiza bya epitaxy reaktor ikeneye.

 

Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro

Isosiyete yacu iratangaSiCserivisi zitunganyirizwa hejuru ya grafite, ceramique nibindi bikoresho hakoreshejwe uburyo bwa CVD, kugirango imyuka idasanzwe irimo karubone na silikoni ishobora kwitwara mubushyuhe bwinshi kugirango ibone molekile nziza ya Sic, ishobora gushyirwa hejuru yibikoresho bisize kugirango bibe aKurinda SiCkuri epitaxy barrel ubwoko bwa hy pnotic.

 

sic (1)

sic (2)

Ibyingenzi

1. Kurwanya ubushyuhe bukabije bwa okiside:
kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.
2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.
3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.
4. Kurwanya ruswa: aside, alkali, umunyu hamwe na reagent.

Ibyingenzi byingenzi bya CVD-SIC

Ibiranga SiC-CVD
Imiterere ya Crystal FCC β icyiciro
Ubucucike g / cm ³ 3.21
Gukomera Vickers gukomera 2500
Ingano y'ibinyampeke μm 2 ~ 10
Ubuziranenge bwa Shimi % 99.99995
Ubushyuhe J · kg-1 · K-1 640
Ubushyuhe bwo hejuru 2700
Imbaraga zidasanzwe MPa (RT-amanota 4) 415
Umusore Modulus Gpa (4pt yunamye, 1300 ℃) 430
Kwagura Ubushyuhe (CTE) 10-6K-1 4.5
Amashanyarazi (W / mK) 300
Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
Serivisi yacu

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