Ibisobanuro ku bicuruzwa
Isosiyete yacu iratangaSiCserivisi zitunganijwe nuburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, bikoraSIC ikingira.
Ibyingenzi byingenzi:
1. Kurwanya ubushyuhe bukabije bwa okiside:
kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.
2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.
3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.
4. Kurwanya ruswa: aside, alkali, umunyu na reagent.
Ibyingenzi byingenzi bya CVD-SIC
| Ibiranga SiC-CVD | ||
| Imiterere ya Crystal | FCC β icyiciro | |
| Ubucucike | g / cm ³ | 3.21 |
| Gukomera | Vickers gukomera | 2500 |
| Ingano y'ibinyampeke | μm | 2 ~ 10 |
| Ubuziranenge bwa Shimi | % | 99.99995 |
| Ubushyuhe | J · kg-1 · K-1 | 640 |
| Ubushyuhe bwo hejuru | ℃ | 2700 |
| Imbaraga zidasanzwe | MPa (RT-amanota 4) | 415 |
| Umusore Modulus | Gpa (4pt yunamye, 1300 ℃) | 430 |
| Kwagura Ubushyuhe (CTE) | 10-6K-1 | 4.5 |
| Amashanyarazi | (W / mK) | 300 |
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Silicon Carbide Wafer Pedestal
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Semiconductor SiC yatwikiriye monocrystalline silico ...
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Kurwanya anti-okiside isukuye cyane SiC yatwikiriye tray ya MOCVD
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Silicon carbide wafer ubwato
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Silicon Carbide Igikoresho cya Graphite Igikoresho, kuri Epit ...
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Silicon Carbide Yashizwemo Barrel Susceptor ya Waf ...