Ibisobanuro
Semicera ya SiC itwikiriwe na grafite ya suseptor yakozwe hakoreshejwe sisitemu yo mu rwego rwohejuru ya grafite, ihujwe neza na Silicon Carbide (SiC) ikoresheje uburyo bwa kijyambere bwa Vapor Deposition (CVD). Igishushanyo mbonera gishya kirwanya imbaraga zidasanzwe zo guhangana nubushyuhe bwumuriro no kwangirika kwimiti, byongerera cyane ubuzima bwa SiC yubatswe na grafite susceptor kandi ikanatanga imikorere yizewe mugihe cyo gukora igice cya kabiri.
Ibintu by'ingenzi ：
1. Amashanyarazi meza cyaneSiC yometse kuri grafite susceptor yerekana ubushyuhe budasanzwe bwumuriro, ningirakamaro mugukwirakwiza neza ubushyuhe mugihe cyo gukora semiconductor. Iyi mikorere igabanya ubushyuhe bwumuriro hejuru ya wafer, igateza imbere ubushyuhe bumwe bukenewe kugirango umuntu agere ku cyifuzo cya semiconductor.
2. Kurwanya Imiti nubushyuhe bukomeyeIgicapo cya SiC gitanga uburinzi bukomeye bwo kwirinda kwangirika kwa chimique no guhungabana k'ubushyuhe, bikomeza ubusugire bwa susite ya grafite ndetse no mubidukikije bitunganijwe. Uku kuramba kwongerewe kugabanya kugabanya igihe kandi bikongerera igihe cyo kubaho, bikagira uruhare mu kongera umusaruro no gukoresha neza ibicuruzwa bikoreshwa mu gice cya kabiri.
3. Guhitamo kubikenewe byihariyeSiC yatwikiriwe na grafite susceptors irashobora guhuzwa kugirango ihuze ibyifuzo byihariye. Dutanga urutonde rwamahitamo yihariye, harimo ingano yoguhindura no gutandukana mubyerekeranye nuburinganire, kugirango tumenye neza igishushanyo mbonera no gukora neza kubikorwa bitandukanye nibikorwa.
Porogaramu ：
PorogaramuSemicera SiC yambarwa ikoreshwa mubyiciro bitandukanye byo gukora igice cya kabiri, harimo:
1. -UBIKORWA BIKORESHEJWE
2. -Umusaruro wa Polisilicon
3. -Imikurire ya Semiconductor Gukura
4. -Silicon na SiC Epitaxy
5. -Ubushuhe bwa Oxideya na Diffusion (TO&D)
Ibisobanuro bya tekiniki ：
