Ibisobanuro
Silicon Carbide EpitaxialDisiki ya Wafer kubikoresho bya VEECO biva muri semicera byakozwe neza-kubikorwa bya epitaxial igezweho, byemeza ibisubizo byujuje ubuziranenge muri byombiSi EpitaxynaSiC EpitaxyPorogaramu. Iyi disiki ya wafer yagenewe cyane cyane ibikoresho bya VEECO, byongera imikorere nubushobozi bwibikorwa bitandukanye bya semiconductor. Ubuhanga bwa Semicera butanga uburambe budasanzwe kandi busobanutse kubikorwa bikomeye.
Iyi epitaxial wafer disiki nibyiza gukoreshwa hamweMOCVDsisitemu, itanga inkunga ikomeye kubice byingenzi nkaPSS Gutwara, Ikarita ya ICP, naRTP. Byongeye kandi, batanga uburyo bwiza bwo guhuza hamweLED Epitaxial Susceptor, Barrel Susceptor, na Monocrystalline Silicon itunganya, kwemeza ko imirongo yawe ikora igumana ibipimo bihanitse byo gukora neza kandi neza.
Yagenewe ikoranabuhanga rigezweho, iyi disiki ya wafer igira uruhare runini mu gukora ibice bya Photovoltaic kandi ikorohereza inzira igoye nka GaN kuri SiC Epitaxy. Byaba bikoreshwa muburyo bwa Pancake Susceptor cyangwa nibindi bisabwa, porogaramu ya Silicon Carbide Epitaxial Wafer Disiki ya semicera itanga umusingi wizewe wo gukora semiconductor yateye imbere, itanga imikorere myiza kandi iramba.
Ibyingenzi
1 .Ubuziranenge bwera SiC yashushanyije grafite
2. Kurwanya ubushyuhe burenze & uburinganire bwumuriro
3. NibyizaSiC ya kirisitiKuri Ubuso
4. Kuramba cyane kurwanya isuku yimiti
Ibyingenzi byingenzi bya CVD-SIC Coatings:
SiC-CVD | ||
Ubucucike | (g / cc) | 3.21 |
Imbaraga zoroshye | (Mpa) | 470 |
Kwiyongera k'ubushyuhe | (10-6 / K) | 4 |
Amashanyarazi | (W / mK) | 300 |
Gupakira no kohereza
Ubushobozi bwo gutanga:
10000 Igice / Ibice buri kwezi
Gupakira & Gutanga:
Gupakira: Bisanzwe & Gupakira bikomeye
Umufuka wuzuye + Agasanduku + Ikarito + Pallet
Icyambu:
Ningbo / Shenzhen / Shanghai
Igihe cyo kuyobora:
Umubare (Ibice) | 1-1000 | > 1000 |
Est. Igihe (iminsi) | 30 | Kuganira |