Semicera'sSilicon Carbide Epitaxyni injeniyeri kugirango ihuze ibyifuzo bikomeye bigezweho bya semiconductor. Mugukoresha tekinoroji yo gukura ya epitaxial, turemeza ko buri cyiciro cya karubide ya silicon yerekana ubuziranenge bwa kristaline, uburinganire, hamwe nubucucike buke. Ibi biranga nibyingenzi mugutezimbere imbaraga za elegitoroniki zikora cyane, aho gukora neza no gucunga ubushyuhe nibyingenzi.
UwitekaSilicon Carbide Epitaxyinzira kuri Semicera itezimbere kugirango itange epitaxial layer ifite uburebure bwuzuye no kugenzura doping, byemeza imikorere ihamye mubikoresho bitandukanye. Uru rwego rwibisobanuro ningirakamaro mubisabwa mumodoka zikoresha amashanyarazi, sisitemu yingufu zishobora kuvugururwa, hamwe n’itumanaho ryinshi, aho kwizerwa no gukora neza ari ngombwa.
Byongeye kandi, SemiceraSilicon Carbide Epitaxyitanga ubushyuhe bwiyongera bwumuriro hamwe na voltage yo hejuru cyane, bigatuma ihitamo kubikoresho bikora mubihe bikabije. Iyi mitungo igira uruhare mubikoresho birebire byubuzima no kunoza imikorere muri sisitemu, cyane cyane mububasha bukomeye nubushyuhe bwo hejuru.
Semicera itanga kandi uburyo bwo guhitamoSilicon Carbide Epitaxy, kwemerera ibisubizo byujuje ibyangombwa bisabwa. Haba kubushakashatsi cyangwa umusaruro munini, ibice byacu bya epitaxial byashizweho kugirango dushyigikire igisekuru kizaza cyo guhanga udushya twa semiconductor, bigafasha iterambere ryibikoresho bya elegitoroniki bikomeye, bikora neza, kandi byizewe.
Muguhuza tekinoroji igezweho hamwe nuburyo bukomeye bwo kugenzura ubuziranenge, Semicera iremeza ko iyacuSilicon Carbide Epitaxyibicuruzwa ntabwo byujuje gusa ahubwo birenze ibipimo byinganda. Uku kwiyemeza kuba indashyikirwa bituma ibice byacu bya epitaxial umusingi mwiza wibikorwa bya semiconductor bigezweho, bigatanga inzira yo gutera imbere muri electronics power na optoelectronics.
Ibintu | Umusaruro | Ubushakashatsi | Dummy |
Ibipimo bya Crystal | |||
Polytype | 4H | ||
Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
Ibipimo by'amashanyarazi | |||
Dopant | Ubwoko bwa Azote | ||
Kurwanya | 0.015-0.025ohm · cm | ||
Ibipimo bya mashini | |||
Diameter | 150.0 ± 0.2mm | ||
Umubyimba | 350 ± 25 mm | ||
Icyerekezo cyibanze | [1-100] ± 5 ° | ||
Uburebure bwibanze | 47.5 ± 1.5mm | ||
Igice cya kabiri | Nta na kimwe | ||
TTV | ≤5 mm | ≤10 mm | ≤15 mm |
LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
Imiterere | |||
Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
Umwanda | ≤5E10atoms / cm2 | NA | |
BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
Ubwiza bw'imbere | |||
Imbere | Si | ||
Kurangiza | Si-face CMP | ||
Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
Ikimenyetso cya laser imbere | Nta na kimwe | ||
Inyuma Yinyuma | |||
Kurangiza | C-isura CMP | ||
Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
Inenge zinyuma (chips / indents) | Nta na kimwe | ||
Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
Impande | |||
Impande | Chamfer | ||
Gupakira | |||
Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
* Inyandiko : "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. |