Silicon Carbide Epitaxy

Ibisobanuro bigufi:

Silicon Carbide Epitaxy- Epitaxial yo mu rwego rwohejuru igenewe porogaramu igezweho ya semiconductor, itanga imikorere isumba iyindi kandi yizewe kubikoresho bya elegitoroniki nibikoresho bya optoelectronic.


Ibicuruzwa birambuye

Ibicuruzwa

Semicera'sSilicon Carbide Epitaxyni injeniyeri kugirango ihuze ibyifuzo bikomeye bigezweho bya semiconductor. Mugukoresha tekinoroji yo gukura ya epitaxial, turemeza ko buri cyiciro cya karubide ya silicon yerekana ubuziranenge bwa kristaline, uburinganire, hamwe nubucucike buke. Ibi biranga nibyingenzi mugutezimbere imbaraga za elegitoroniki zikora cyane, aho gukora neza no gucunga ubushyuhe nibyingenzi.

UwitekaSilicon Carbide Epitaxyinzira kuri Semicera itezimbere kugirango itange epitaxial layer ifite uburebure bwuzuye no kugenzura doping, byemeza imikorere ihamye mubikoresho bitandukanye. Uru rwego rwibisobanuro ningirakamaro mubisabwa mumodoka zikoresha amashanyarazi, sisitemu yingufu zishobora kuvugururwa, hamwe n’itumanaho ryinshi, aho kwizerwa no gukora neza ari ngombwa.

Byongeye kandi, SemiceraSilicon Carbide Epitaxyitanga ubushyuhe bwiyongera bwumuriro hamwe na voltage yo hejuru cyane, bigatuma ihitamo kubikoresho bikora mubihe bikabije. Iyi mitungo igira uruhare mubikoresho birebire byubuzima no kunoza imikorere muri sisitemu, cyane cyane mububasha bukomeye nubushyuhe bwo hejuru.

Semicera itanga kandi uburyo bwo guhitamoSilicon Carbide Epitaxy, kwemerera ibisubizo byujuje ibyangombwa bisabwa. Haba kubushakashatsi cyangwa umusaruro munini, ibice byacu bya epitaxial byashizweho kugirango dushyigikire igisekuru kizaza cyo guhanga udushya twa semiconductor, bigafasha iterambere ryibikoresho bya elegitoroniki bikomeye, bikora neza, kandi byizewe.

Muguhuza tekinoroji igezweho hamwe nuburyo bukomeye bwo kugenzura ubuziranenge, Semicera iremeza ko iyacuSilicon Carbide Epitaxyibicuruzwa ntabwo byujuje gusa ahubwo birenze ibipimo byinganda. Uku kwiyemeza kuba indashyikirwa bituma ibice byacu bya epitaxial umusingi mwiza wibikorwa bya semiconductor bigezweho, bigatanga inzira yo gutera imbere muri electronics power na optoelectronics.

Ibintu

Umusaruro

Ubushakashatsi

Dummy

Ibipimo bya Crystal

Polytype

4H

Ikosa ryerekana icyerekezo

<11-20> 4 ± 0.15 °

Ibipimo by'amashanyarazi

Dopant

Ubwoko bwa Azote

Kurwanya

0.015-0.025ohm · cm

Ibipimo bya mashini

Diameter

150.0 ± 0.2mm

Umubyimba

350 ± 25 mm

Icyerekezo cyibanze

[1-100] ± 5 °

Uburebure bwibanze

47.5 ± 1.5mm

Igice cya kabiri

Nta na kimwe

TTV

≤5 mm

≤10 mm

≤15 mm

LTV

≤3 μm (5mm * 5mm)

≤5 μm (5mm * 5mm)

≤10 μ m (5mm * 5mm)

Umuheto

-15 mm ~ 15 mm

-35μm ~ 35μm

-45μm ~ 45μm

Intambara

≤35 mm

≤45 mm

≤55 mm

Imbere (Si-face) ubukana (AFM)

Ra≤0.2nm (5μm * 5μm)

Imiterere

Ubucucike bwa Micropipe

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Umwanda

≤5E10atoms / cm2

NA

BPD

≤1500 ea / cm2

0003000 ea / cm2

NA

TSD

≤500 ea / cm2

0001000 ea / cm2

NA

Ubwiza bw'imbere

Imbere

Si

Kurangiza

Si-face CMP

Ibice

≤60ea / wafer (ubunini≥0.3μm)

NA

Igishushanyo

≤5ea / mm. Uburebure bwuzuye ≤Ibipimo

Uburebure bwuzuye≤2 * Diameter

NA

Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza

Nta na kimwe

NA

Imipira yimpande / ibyerekana / kuvunika / isahani

Nta na kimwe

Agace ka polytype

Nta na kimwe

Agace kegeranye ≤20%

Agace kegeranye ≤30%

Ikimenyetso cya laser imbere

Nta na kimwe

Inyuma Yinyuma

Kurangiza

C-isura CMP

Igishushanyo

≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter

NA

Inenge zinyuma (chips / indents)

Nta na kimwe

Inyuma yinyuma

Ra≤0.2nm (5μm * 5μm)

Ikimenyetso cya laser inyuma

Mm 1 (uhereye hejuru)

Impande

Impande

Chamfer

Gupakira

Gupakira

Epi-yiteguye hamwe no gupakira vacuum

Gupakira cassette nyinshi

* Inyandiko : "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD.

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SiC wafers

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