Silicon karbide RTA itwara plaque ya semiconductor

Ibisobanuro bigufi:

Carbide ya silicon nubwoko bushya bwibumba hamwe nibikorwa bihenze kandi nibintu byiza cyane. Bitewe nibintu nkimbaraga nyinshi nubukomezi, kurwanya ubushyuhe bwinshi, ubukana bwumuriro mwinshi hamwe no kurwanya ruswa, Silicon Carbide irashobora kwihanganira imiti yose yimiti. Niyo mpamvu, SiC ikoreshwa cyane mu bucukuzi bwa peteroli, imiti, imashini n’ikirere, ndetse n’ingufu za kirimbuzi ndetse n’abasirikare bafite ibyo basaba bidasanzwe kuri SIC. Porogaramu zimwe zishobora gutanga ni impeta ya kashe ya pompe, valve nintwaro zo gukingira nibindi.

Turashoboye gushushanya no gukora dukurikije ibipimo byihariye bifite ireme ryiza kandi ryumvikana ryo gutanga.


Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro

Isosiyete yacu itanga serivise zo gutunganya SiC hakoreshejwe uburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, gukora urwego rwo kurinda SIC.

Ibyingenzi

1. Kurwanya ubushyuhe bukabije bwa okiside:
kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.
2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.
3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.
4. Kurwanya ruswa: aside, alkali, umunyu na reagent.

Ibyingenzi byingenzi bya CVD-SIC

Ibiranga SiC-CVD

Imiterere ya Crystal FCC β icyiciro
Ubucucike g / cm ³ 3.21
Gukomera Vickers gukomera 2500
Ingano y'ibinyampeke μm 2 ~ 10
Ubuziranenge bwa Shimi % 99.99995
Ubushyuhe J · kg-1 · K-1 640
Ubushyuhe bwo hejuru 2700
Imbaraga zidasanzwe MPa (RT-amanota 4) 415
Umusore Modulus Gpa (4pt yunamye, 1300 ℃) 430
Kwagura Ubushyuhe (CTE) 10-6K-1 4.5
Amashanyarazi (W / mK) 300
Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
Serivisi yacu

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