SOI Wafers

Ibisobanuro bigufi:

SOI wafer ni imiterere isa na sandwich ifite ibice bitatu; Harimo igice cyo hejuru (igikoresho cyibikoresho), hagati ya ogisijeni yashyinguwe (kubutaka bwa SiO2) hamwe na substrate yo hepfo (silicon nyinshi). SOI wafers ikorwa hifashishijwe uburyo bwa SIMOX hamwe na tekinoroji yo guhuza wafer, itanga uburyo bworoshye kandi bwuzuye bwibikoresho, uburebure bumwe nubucucike buke.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

SOI Wafers (1)

Umwanya wo gusaba

1. Umuvuduko wihuse wuzuzanya

2. Ibikoresho bya Microwave

3. Ubushyuhe bwo hejuru bwuzuzanya

4. Ibikoresho by'ingufu

5. Imbaraga nkeya zishyizwe hamwe

6. MEMS

7. Umuvuduko muke wuzuzanya wumuzingi

Ingingo		Impaka
Muri rusange	Diameter Mm (mm)	50/75/100/125/150 / 200mm ± 25um
	Umuheto / Intambara 翘曲度 (	<10um
	Ibice 颗粒度 (	0.3um <30ea
	Amagorofa / Ikimenyetso 定位边 / 定位槽	Flat cyangwa Notch
	Guhezwa Mm (mm)	/
Igikoresho 器件层	Ubwoko-Ibikoresho Ubwoko / Dopant 器件层掺杂类型	N-Ubwoko / P-Ubwoko B / P / Sb / Nk
	Icyerekezo-Igikoresho 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Ububiko-igikoresho Um (um)	0.1 ~ 300um
	Ibikoresho birwanya Kurwanya Oh (ohm • cm)	0.001 ~ 100.000 ohm-cm
	Ibikoresho-ibice 器件层颗粒度 (	<30ea@0.3
	Ibikoresho bya TTV TTV (	<10um
	Kurangiza Ibikoresho 器件层表面处理	Yasizwe
BOX	Gushyingura Ubushyuhe bwa Oxide Um (um)	50nm (500Å) ~ 15um
Koresha Inzira 衬底	Koresha Wafer Ubwoko / Dopant 衬底层类型	N-Ubwoko / P-Ubwoko B / P / Sb / Nk
	Koresha Icyerekezo cya Wafer 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Koresha Wafer Kurwanya Oh (ohm • cm)	0.001 ~ 100.000 ohm-cm
	Koresha Ubunini bwa Wafer Um (um)	> 100um
	Koresha Wafer Kurangiza 衬底表面处理	Yasizwe
SOI wafers yintego yihariye irashobora gutegurwa ukurikije ibyo abakiriya bakeneye.