Semicerayishimiye gutanga2 "Substrates ya Gallium Oxide, ibikoresho bigezweho bigamije kuzamura imikorere yibikoresho bigezweho. Izi substrate, zakozwe muri Oxide ya Gallium (Ga2O3), biranga ultra-rugari ya bandgap, bigatuma bahitamo neza kubububasha bukomeye, inshuro nyinshi, na UV optoelectronic progaramu.
Ibintu by'ingenzi:
• Ultra-Wide Bandgap:.2 "Substrates ya Gallium Oxidetanga umurongo udasanzwe wa hafi 4.8 eV, utanga imbaraga za voltage nubushyuhe bwo hejuru, birenze kure ubushobozi bwibikoresho bya semiconductor gakondo nka silicon.
•Umuvuduko udasanzwe wo kumeneka: Izi substrate zifasha ibikoresho gukora voltage iri hejuru cyane, bigatuma ikora neza kuri electronics power, cyane cyane mumashanyarazi menshi.
•Imyitwarire myiza yubushyuhe.
•Ibikoresho byo mu rwego rwo hejuru:.2 "Substrates ya Gallium Oxidetanga ubucucike buke nubuziranenge bwa kristaline, byemeza imikorere yizewe kandi ikora neza yibikoresho bya semiconductor.
•Porogaramu zitandukanye.
Fungura ubushobozi bwuzuye bwibikoresho bya semiconductor hamwe na Semicera2 "Substrates ya Gallium Oxide. Substrates zacu zashizweho kugirango zihuze ibyifuzo bikenewe byiterambere rya none, byemeza imikorere myiza, kwiringirwa, no gukora neza. Hitamo Semicera kubikoresho bigezweho bya semiconductor itwara udushya.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
