Semiceraishema ryerekana4 "Gallium Oxide Substrates, ibintu bimeneka byashizweho kugirango bihuze ibyifuzo byiyongera byimikorere ya semiconductor. Oxide ya Gallium (Ga2O3.
Ibintu by'ingenzi:
• Ultra-Wide Bandgap:.4 "Gallium Oxide Substrateskwirata bande ya hafi 4.8 eV, itanga imbaraga zidasanzwe hamwe no kwihanganira ubushyuhe, iruta cyane ibikoresho bya semiconductor gakondo nka silicon.
•Umuvuduko mwinshi wo kumeneka: Izi substrate zituma ibikoresho bikora kuri voltage nimbaraga nyinshi, bigatuma bikora neza mumashanyarazi menshi mumashanyarazi.
•Ubushyuhe bwo hejuru: Gallium Oxide substrate itanga ubushyuhe bwiza bwumuriro, itanga imikorere ihamye mubihe bikabije, byiza gukoreshwa mubidukikije.
•Ubwiza bwibikoresho byo hejuru: Hamwe nubucucike buke hamwe nubuziranenge bwo hejuru bwa kristu, izi substrate zemeza imikorere yizewe kandi ihamye, izamura imikorere nigihe kirekire cyibikoresho byawe.
•Porogaramu zitandukanye: Birakwiriye kumurongo mugari wa porogaramu, harimo transistoriste yamashanyarazi, diode ya Schottky, hamwe nibikoresho bya UV-C LED, bigafasha udushya mumashanyarazi ndetse na optoelectronic.
Shakisha ahazaza h'ikoranabuhanga rya semiconductor hamwe na Semicera4 "Gallium Oxide Substrates. Substrates zacu zagenewe gushyigikira porogaramu zateye imbere, zitanga ubwizerwe nubushobozi bukenewe kubikoresho bigezweho. Izere Semicera kubwiza no guhanga udushya mubikoresho bya semiconductor.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
