Sisitemu ya SiC Ubushyuhe Bwashyushye Barri Epi Sisitemu

Igicapo cya SiC Ubushyuhe Bishyushye Barri Epi Sisitemu Yerekanwe

Ibisobanuro bigufi:

Semicera itanga urwego rwuzuye rwa suseptors hamwe na grafite igizwe na reaction ya epitaxy itandukanye.

Binyuze mu bufatanye bufatika na OEM iyobora inganda, ubumenyi bwibikoresho byinshi, hamwe nubushobozi buhanitse bwo gukora, Semicera itanga ibishushanyo mbonera byujuje ibisabwa byihariye byo gusaba. Ibyo twiyemeje kuba indashyikirwa byemeza ko wakiriye ibisubizo byiza bya epitaxy reaktor ikeneye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Isosiyete yacu iratangaSiCserivisi zitunganyirizwa hejuru ya grafite, ceramics nibindi bikoresho hakoreshejwe uburyo bwa CVD, kugirango imyuka idasanzwe irimo karubone na silikoni ishobora kwitwara mubushyuhe bwinshi kugirango ibone molekile nziza ya Sic, ishobora gushyirwa hejuru yibikoresho bisize kugirango ikore aKurinda SiCkuri epitaxy barrel ubwoko bwa hy pnotic.

Ibyingenzi byingenzi:

1 .Ubuziranenge bwera SiC yashushanyije grafite

2. Kurwanya ubushyuhe burenze & uburinganire bwumuriro

3. NibyizaSiC ya kirisitiKuri Ubuso

4. Kuramba cyane kurwanya isuku yimiti

Barrel Susceptor hamwe na SiC Coating muri Semiconductor

Ibyingenzi byingenzi byaCVD-SIC

Ibiranga SiC-CVD
Imiterere ya Crystal	FCC β icyiciro
Ubucucike	g / cm ³	3.21
Gukomera	Vickers gukomera	2500
Ingano y'ibinyampeke	μm	2 ~ 10
Ubuziranenge bwa Shimi	%	99.99995
Ubushyuhe	J · kg-1 · K-1	640
Ubushyuhe bwo hejuru	℃	2700
Imbaraga zidasanzwe	MPa (RT-amanota 4)	415
Umusore Modulus	Gpa (4pt yunamye, 1300 ℃)	430
Kwagura Ubushyuhe (CTE)	10-6K-1	4.5
Amashanyarazi	(W / mK)	300