Semicera yishimiye kwerekanaGa2O3Substrate, ibikoresho bigezweho byiteguye guhindura ingufu za electronics na optoelectronics.Oxide ya Gallium (Ga2O3)bazwiho ultra-rugari ya bande, bigatuma iba nziza kubikoresho byinshi-by-ibikoresho byinshi.
Ibintu by'ingenzi:
• Ultra-Broad Bandgap: Ga2O3 itanga umurongo wa hafi 4.8 eV, ikongerera cyane ubushobozi bwayo bwo gukoresha ingufu nyinshi nubushyuhe ugereranije nibikoresho gakondo nka Silicon na GaN.
• Umuvuduko mwinshi wo kumeneka: Hamwe n'umwanya udasanzwe wo gusenyuka ,.Ga2O3Substrateni byiza kubikoresho bisaba imbaraga za voltage nyinshi, byemeza imikorere myiza kandi yizewe.
• Ubushyuhe bwa Thermal: Ibikoresho birenze ubushyuhe bwumuriro bituma bikenerwa mubidukikije bidakabije, bikomeza imikorere ndetse no mubihe bibi.
• Porogaramu zinyuranye: Nibyiza byo gukoresha mumashanyarazi akomeye cyane, ibikoresho bya UV optoelectronic, nibindi byinshi, bitanga umusingi ukomeye wa sisitemu ya elegitoroniki igezweho.
Inararibonye ejo hazaza h'ikoranabuhanga rya semiconductor hamwe na SemiceraGa2O3Substrate. Yashizweho kugirango ihuze ibyifuzo byiyongera byingufu-nini na elegitoroniki ya elegitoroniki, iyi substrate ishyiraho urwego rushya rwo gukora no kuramba. Izere Semicera gutanga ibisubizo bishya kubikorwa byawe bigoye.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
