Ibisobanuro ku bicuruzwa
4h-n 4inch 6inch dia100mm sic imbuto wafer 1mm ubugari kugirango ingot ikure
Ingano ya Customzied / 2inch / 3inch / 4inch / 6inch 6H-N / 4H-SEMI / 4H-N SIC ingots / Isuku ryinshi 4H-N 4inch 6inch dia 150mm silicon karbide imwe ya kirisiti (sic) substrates wafersS / Customzied as-cut sic wafersProduction 4inch icyiciro 4H-N 1.5mm SIC Wafers ya kristu yimbuto
Ibyerekeye Carbide ya Silicon (SiC) Crystal
Carbide ya Silicon (SiC), izwi kandi nka carborundum, ni igice cya kabiri kirimo silikoni na karubone hamwe na formula ya chimique SiC. SiC ikoreshwa mubikoresho bya elegitoroniki ya semiconductor ikora ku bushyuhe bwinshi cyangwa kuri voltage nyinshi, cyangwa byombi.SiC nayo ni kimwe mu bice byingenzi bigize LED, ni substrate izwi cyane mu gukura ibikoresho bya GaN, kandi ikora nk'ikwirakwiza ubushyuhe muri- amashanyarazi LED.
Ibisobanuro
| Umutungo | 4H-SiC, Crystal imwe | 6H-SiC, Crystal imwe |
| Ibipimo bya Lattice | a = 3.076 Å c = 10.053 Å | a = 3.073 Å c = 15.117 Å |
| Urutonde rukurikirana | ABCB | ABCACB |
| Mohs Gukomera | ≈9.2 | ≈9.2 |
| Ubucucike | 3.21 g / cm3 | 3.21 g / cm3 |
| Ubushuhe. Coefficient yo kwaguka | 4-5 × 10-6 / K. | 4-5 × 10-6 / K. |
| Igipimo cyo kugabanya @ 750nm | oya = 2.61 | oya = 2.60 |
| Umuyoboro uhoraho | c ~ 9.66 | c ~ 9.66 |
| Amashanyarazi (N-ubwoko, 0.02 ohm.cm) | a ~ 4.2 W / cm · K @ 298K |
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| Imyitwarire yubushyuhe (Semi-insulation) | a ~ 4.9 W / cm · K @ 298K | a ~ 4,6 W / cm · K @ 298K |
| Umuyoboro | 3.23 eV | 3.02 eV |
| Kumena-Amashanyarazi | 3-5 × 106V / cm | 3-5 × 106V / cm |
| Kwiyongera Kwihuta Umuvuduko | 2.0 × 105m / s | 2.0 × 105m / s |
